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Infineon Technologies IPD80R600P7ATMA1
Infineon Technologies

Infineon IPD80R600P7ATMA1 N-Channel MOSFET, 800 V, 8 A

MPNIPD80R600P7ATMA1
End of Life

Infineon CoolMOS™ P7 series, IPD80R600P7ATMA1, N-Channel MOSFET, 800 V Vdss, 8 A Id, 600 mOhm Rds(on) @ 10 V, 20 nC Qg, PG-TO252-3 package, -55°C to 150°C junction temperature.

$1.56Ref. price · indicative, final on quote
IPD80R600P7ATMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD80R600P7ATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 170µA
Rds on (Max) @ id, vgs600mOhm @ 3.4A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds570 pF @ 500 V

Product details

The input capacitance Ciss is 570 pF at 500 V drain bias, so the miller plateau is narrow — the part transitions through the linear region quickly, reducing cross-conduction losses in a half-bridge leg.

Temperature range and package — where this part sits on the board

The PG-TO252-3 (DPak) surface-mount package has a tab that carries the drain current and conducts heat to the PCB copper — the 60 W maximum power dissipation assumes a thermal pad.

The CoolMOS P7 series is Infineon's current-generation high-voltage MOSFET platform, and this TO-252-3 variant is a standard offering through distribution channels.

Frequently asked questions

What is the Rds(on) and gate charge of IPD80R600P7ATMA1?

The maximum Rds(on) is 600 mOhm at 3.4 A drain current with 10 V gate drive. The maximum gate charge is 20 nC at 10 V gate-source voltage.

Is IPD80R600P7ATMA1 RoHS compliant?

Yes, the part is listed as ROHS3 compliant.