800 V MOSFET in a TO-252 — where it fits
The IPD80R450P7ATMA1: Packaged in a surface-mount PG-TO252-2 (DPak), it targets high-voltage switch-mode power supplies — PFC boost stages, flyback converters, and LLC resonant half-bridges.
At 450 mOhm maximum with 10 V gate drive, this part sits in the middle of the CoolMOS™ 800 V family — lower on-resistance than the 950 mOhm IPD50R950CEAUMA1, which means lower conduction loss for the same current. The 770 pF input capacitance at 500 V drain bias gives a Ciss figure that helps estimate driver power: at 100 kHz and 10 V gate swing, the driver dissipates roughly 77 mW just charging and discharging Ciss.
Thermal and package — what the TO-252 handles
Maximum power dissipation is 73 W at case temperature. In practice, the TO-252 (DPak) package on a standard FR-4 board with 1 oz copper will thermally limit the part well below that — expect to derate to roughly 2.5 W to 3 W in still air at 25°C ambient before the junction hits 150°C. The PG-TO252-2 supplier device package has a tab that is the drain connection; the PCB copper area under the tab is the primary heat path.
Lifecycle and compliance — no surprises for the BOM
ROHS3 compliant, covering all ten restricted substances.