Infineon CoolMOS™ P7 series, IPD80R3K3P7ATMA1, N-Channel MOSFET, 800V Vdss, 1.9A Id, 3.3 Ohm Rds(on) at 10V, 5.8 nC Qg, TO-252-3 (DPak) package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 1.9A (Tc) |
| Power dissipation | 18W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.5V @ 30µA |
| Rds on (Max) @ id, vgs | 3.3Ohm @ 590mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 5.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 120 pF @ 500 V |
The Infineon IPD80R3K3P7ATMA1 is an 800 V N-channel MOSFET from the CoolMOS series, housed in a TO-252-3 (DPak) surface-mount package.
The total gate charge is 5.8 nC at 10 V, with an input capacitance of 120 pF measured at 500 V drain-source bias. The threshold voltage maxes out at 3.5 V at 30 µA drain current.
Yes, the IPD80R3K3P7ATMA1 is ROHS3 compliant per the Infineon lifecycle record.
The IPD80R3K3P7ATMA1 is the surface-mount TO-252 (DPak) variant, while the IPP80R3K3P7 is the through-hole TO-220 version. The die and electrical characteristics are identical — same 800 V Vdss, 3.3 Ohm Rds(on), 5.8 nC gate charge. The choice comes down to assembly method: reflow soldering for the DPak versus through-hole wave soldering for the TO-220. The thermal performance differs due to the package — TO-220 with a heatsink can dissipate more power than the DPak on a PCB copper land.