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Infineon Technologies IPD80R3K3P7ATMA1
Infineon Technologies

Infineon IPD80R3K3P7ATMA1 CoolMOS P7 N-Ch MOSFET, 800V, 1.9A

MPNIPD80R3K3P7ATMA1
End of Life

Infineon CoolMOS™ P7 series, IPD80R3K3P7ATMA1, N-Channel MOSFET, 800V Vdss, 1.9A Id, 3.3 Ohm Rds(on) at 10V, 5.8 nC Qg, TO-252-3 (DPak) package, -55°C to 150°C junction temperature.

$0.31736Ref. price · indicative, final on quote
IPD80R3K3P7ATMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD80R3K3P7ATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.9A (Tc)
Power dissipation18W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 30µA
Rds on (Max) @ id, vgs3.3Ohm @ 590mA, 10V
Gate charge (Qg) (Max) @ vgs5.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds120 pF @ 500 V

Product details

800 V CoolMOS P7 in a TO-252 — what it delivers for the offline supply

The Infineon IPD80R3K3P7ATMA1 is an 800 V N-channel MOSFET from the CoolMOS series, housed in a TO-252-3 (DPak) surface-mount package. That Rds(on) is specified at the recommended 10 V gate drive, not at a lower threshold voltage — so the gate driver must supply the full 10 V to hit the rated conduction loss.

Gate charge and switching — sizing the driver

The total gate charge is 5.8 nC at 10 V, with an input capacitance of 120 pF measured at 500 V drain-source bias. The threshold voltage maxes out at 3.5 V at 30 µA drain current. The 10 V drive voltage is needed to achieve the rated 3.3 Ohm on-resistance.

Thermal budget in a TO-252

The maximum power dissipation is 18 W at the case temperature, with a junction temperature range from -55°C to 150°C.

Frequently asked questions

Is IPD80R3K3P7ATMA1 RoHS compliant?

Yes, the IPD80R3K3P7ATMA1 is ROHS3 compliant per the Infineon lifecycle record.

What is the difference between IPD80R3K3P7ATMA1 and IPP80R3K3P7?

The IPD80R3K3P7ATMA1 is the surface-mount TO-252 (DPak) variant, while the IPP80R3K3P7 is the through-hole TO-220 version. The die and electrical characteristics are identical — same 800 V Vdss, 3.3 Ohm Rds(on), 5.8 nC gate charge. The choice comes down to assembly method: reflow soldering for the DPak versus through-hole wave soldering for the TO-220. The thermal performance differs due to the package — TO-220 with a heatsink can dissipate more power than the DPak on a PCB copper land.