800 V CoolMOS™ CE — high-voltage primary switch for offline power
The IPD80R1K0CEATMA1 is an N-channel 800 V MOSFET from Infineon's CoolMOS™ CE series, built on a charge-compensation technology that keeps on-resistance low while handling high blocking voltage. This part targets the primary switch position in flyback and PFC stages for 85–265 VAC input off-line supplies, where the 800 V rating provides headroom above the rectified DC bus and the CoolMOS™ low-Qg structure keeps switching losses manageable.
Parametric anchor points for the BOM engineer
Total gate charge is 31 nC at 10 V — the driver's average output current must deliver that charge within the target switching period. Input capacitance is 785 pF at 100 V drain-source, a figure that influences the gate-drive loop layout and the Miller plateau duration. Maximum power dissipation is 83 W at case temperature, though the practical limit is set by the junction-to-case thermal path in the TO-252-3 package. Gate threshold voltage max is 3.9 V at 250 µA drain current — the design must supply at least 10 V gate drive to achieve the rated Rds(on). The ±20 V Vgs absolute maximum leaves margin for gate-drive overshoot in hard-switched topologies.
The PG-TO252-3 package is a standard DPak footprint shared across the CoolMOS™ CE family.