Infineon CoolMOS™ P7 series, N-Channel MOSFET, 700 V drain-source, 6 A continuous drain, 900 mOhm Rds(on) at 10 V, PG-TO252-3 (DPak) surface mount, -40°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 700 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 30.5W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.5V @ 60µA |
| Rds on (Max) @ id, vgs | 900mOhm @ 1.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 211 pF @ 400 V |
Total gate charge is 6.8 nC at 10 V, and input capacitance Ciss is 211 pF at 400 V drain. The ±16 V maximum gate rating gives headroom above the 10 V drive level used for the rated Rds(on).
The 150°C Tj max is the same as the CoolMOS CE series, so the thermal design rules transfer directly.
No official successor is listed. The CoolMOS P7 family includes multiple Rds(on) tiers, but a direct pin-compatible replacement would need the same PG-TO252-3 footprint and 700 V rating. The peer IPD50R950CEAUMA1 is a 500 V device with a higher Rds(on) — not a functional substitute for a 700 V design.
The evidence does not specify an integrated gate protection diode. Standard ESD handling precautions for a MOSFET with ±16 V max gate rating apply — store in conductive packaging and ground yourself before handling.
Yes, it is ROHS3 compliant.