700 V CoolMOS P7 in a TO-252 — where the 900 mOhm fits
The IPD70R900P7SAUMA1 is an N-Channel MOSFET with 900 mOhm Rds(on) at 10 V gate drive.
Gate charge and capacitance — light load on the driver
Total gate charge is 6.8 nC at 10 V, and input capacitance Ciss is 211 pF at 400 V drain. The ±16 V maximum gate rating gives headroom above the 10 V drive level used for the rated Rds(on).
Junction temperature and application envelope
The 150°C Tj max is the same as the CoolMOS CE series, so the thermal design rules transfer directly.
