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Infineon Technologies IPD70R1K4P7SAUMA1
Infineon Technologies

Infineon IPD70R1K4P7SAUMA1 CoolMOS P7 N-Ch MOSFET, 700V 4A

MPNIPD70R1K4P7SAUMA1
End of Life

Infineon CoolMOS™ P7 series, IPD70R1K4P7SAUMA1, N-Channel MOSFET, 700 V Vdss, 4 A Id, 1.4 Ohm Rds(on), 4.7 nC Qg, PG-TO252-3 package, -40°C to 150°C junction temperature.

$0.58Ref. price · indicative, final on quote
IPD70R1K4P7SAUMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPD70R1K4P7SAUMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage700 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation23W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 40µA
Rds on (Max) @ id, vgs1.4Ohm @ 700mA, 10V
Gate charge (Qg) (Max) @ vgs4.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds158 pF @ 400 V

Product details

700 V N-channel in a TO-252 — what the CoolMOS P7 brings to the board

The Infineon IPD70R1K4P7SAUMA1 is a 700 V N-channel MOSFET from the CoolMOS P7 series, housed in a surface-mount PG-TO252-3 package. It is designed for hard-switching topologies in power supplies, adapters, and lighting ballasts where the combination of high-voltage blocking and low gate charge keeps switching losses in check.

The 158 pF input capacitance at 400 V drain-source confirms the small die size; the driver IC does not need a high peak current to charge the gate.

Package and footprint — TO-252 for automated assembly

The PG-TO252-3 (DPak) footprint is a standard surface-mount outline with a single drain tab.

Frequently asked questions

What is the Rds(on) of IPD70R1K4P7SAUMA1?

At lower gate voltages the Rds(on) rises; the datasheet curve shows the typical value at 8 V is about 1.6 Ohm. For a 4 A load the conduction loss at 1.4 Ohm is 22.4 W — well within the 23 W power dissipation limit only if the case temperature is kept at 25°C or below.