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Infineon Technologies IPD70N12S311ATMA1

IPD70N12S311ATMA1 OptiMOS N-Ch 120V 70A MOSFET, AEC-Q101

MPNIPD70N12S311ATMA1
End of Life

Infineon OptiMOS™ IPD70N12S311ATMA1, N-Channel Automotive MOSFET, 120V Vdss, 70A Id, 11.1mOhm Rds(on) @ 10V, 65nC Qg, PG-TO252-3 package, -55°C to 175°C.

$2.02Ref. price · indicative, final on quote
Infineon Technologies IPD70N12S311ATMA1 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD70N12S311ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage120 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C70A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 83µA
Rds on (Max) @ id, vgs11.1mOhm @ 70A, 10V
Gate charge (Qg) (Max) @ vgs65 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4355 pF @ 25 V

Product details

120 V, 70 A N-channel — the conduction-loss story

The Infineon IPD70N12S311ATMA1 is a 120 V, 70 A N-channel MOSFET from the OptiMOS™ series, built for automotive power switching where every milliohm of on-resistance matters.

Gate charge and switching — what 65 nC buys you

With a typical gate charge of 65 nC at 10 V, this MOSFET is not a high-speed switcher for 500 kHz+ converters — it is sized for PWM frequencies in the 20 kHz to 100 kHz range where the switching loss from charging and discharging the 4355 pF input capacitance is manageable.

Package reality — TO-252-3 on the board

The PG-TO252-3 (DPak) package is a single-gauge surface-mount tabbed device. The ±20 V max gate-source voltage means the gate is not fragile, but ESD handling is still required — a wrist strap and grounded workstation are the minimum.

Frequently asked questions

Is IPD70N12S311ATMA1 AEC-Q101 qualified?

Yes, the IPD70N12S311ATMA1 is AEC-Q101 qualified, which means it has passed the automotive stress tests for discrete semiconductors — including high-temperature reverse bias, temperature cycling, and humidity. This qualification is required for parts used in safety-critical and under-hood automotive systems.

Is IPD70N12S311ATMA1 a logic-level MOSFET?

No. A 5 V logic-level signal will not fully enhance the channel — you need a gate driver that supplies 10 V to achieve the rated 11.1 mOhm on-resistance.