Infineon OptiMOS IPD70N10S312ATMA1, N-Channel MOSFET, 100 V Vdss, 70 A Id, 11.1 mOhm Rds(on) at 10 V, 65 nC Qg, TO-252-3 (DPak), -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 70A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 83µA |
| Rds on (Max) @ id, vgs | 11.1mOhm @ 70A, 10V |
| Gate charge (Qg) (Max) @ vgs | 65 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4355 pF @ 25 V |
Gate charge is 65 nC at 10 V — a figure that directly sizes the gate-drive current for the target switching frequency.
Input capacitance is 4355 pF at 25 V drain-source — the Ciss value that determines the switching energy per cycle.
ROHS3 compliant per.
The IPD50R950CEAUMA1 is a CoolMOS CE device with a 500 V drain-source rating and 950 mOhm Rds(on) — a different voltage class and on-resistance tier, not a functional replacement for this 100 V OptiMOS part.
Yes — the part is listed as ROHS3 compliant.