950 mOhm Rds(on) and 14.1 nC Qg — conduction vs switching trade-off
The 950 mOhm on-resistance at 10 V gate drive is moderate for a 650 V device, keeping conduction losses manageable at the 3.9 A current rating. The 14.1 nC gate charge is low enough that a standard PWM controller or a small-signal gate-drive IC can switch it efficiently without excessive crossover loss. This combination makes the part a natural fit for medium-frequency flyback and PFC stages where the switching loss budget is tighter than the conduction loss budget.
DPAK (TO-252) — surface-mount assembly and thermal path
The DPAK (TO-252) package with two leads and a tab is a standard surface-mount footprint for medium-power MOSFETs. The tab is the drain connection and provides the primary thermal path to the PCB copper pour. With a maximum power dissipation of 36.7 W at case temperature, the board layout must include adequate copper area and vias to a thermal plane; otherwise, junction temperature will limit the usable current below the 3.9 A rating.
Active production, ROHS3 compliant
No end-of-life notice or last-time-buy schedule is on record. For new designs or BOM replenishment, the part is available through independent distribution channels and is quoted to order against an RFQ.