650 V CoolMOS for automotive and industrial power stages
This device is part of the CoolMOS™ series, Infineon's high-voltage MOSFET platform optimized for low switching and conduction losses in hard-switching topologies.
AEC-Q101 qualification and automotive temperature range
The IPD65R660CFDAATMA1 carries AEC-Q101 qualification, making it suitable for automotive-grade power stages where the part must survive the under-hood temperature extremes.
Gate drive and switching considerations
The total gate charge is 20 nC at 10 V Vgs, which is moderate for a 650 V device. In a 100 kHz hard-switched application, the gate drive must supply an average current of about 2 mA plus the peak current needed to charge the gate capacitance during the switching transition. The maximum gate-source voltage rating is ±20 V, so a 10 V or 12 V gate drive rail is well within the safe operating area. The input capacitance Ciss is 543 pF at 100 V Vds. This capacitance, combined with the gate drive source impedance, sets the switching times. For fast edge rates, a dedicated gate driver IC with a low-output impedance is recommended to minimize Miller plateau duration.
Thermal management in the TO-252 package
The maximum power dissipation is 62.5 W at the case temperature. In a surface-mount TO-252 (DPak) package, the thermal performance depends heavily on the PCB copper area connected to the drain tab. For continuous operation at the 6 A rating, a minimum of 1 square inch of 2-oz copper on the drain pad is typical to keep the junction temperature below 150°C at an ambient of 85°C.
Sourcing and supply posture
No stock-holding claim is made; the supply channel is verified per BOM quantity.