650 V CoolMOS CFD2 — fast-switching MOSFET with integrated fast body diode
Its 660 mΩ maximum on-resistance is specified at 10 V gate drive with a 2.1 A test current, and the total gate charge is just 22 nC at 10 V, keeping gate-drive losses low in high-frequency switching. The device is housed in a PG-TO252-3-313 (DPak) surface-mount package with an exposed tab for thermal dissipation, rated for a maximum power dissipation of 62.5 W at the case.
Gate charge and switching — sizing the driver
With a gate charge of 22 nC at 10 V, the IPD65R660CFD requires modest drive current to achieve fast switching edges. A typical gate-driver IC delivering 1 A peak can turn the device on in under 25 ns, which keeps cross-conduction losses low in hard-switched topologies like flyback or two-switch forward converters. The input capacitance is 615 pF at 100 V drain bias, so the driver's sink capability should be checked against the Miller plateau duration to avoid excessive switching loss at frequencies above 100 kHz.
Package and thermal — the DPak footprint
The PG-TO252-3-313 (DPak) package has three pins plus a tab that is internally connected to the drain. The operating junction temperature range is -55 °C to 150 °C, so the part can handle high ambient temperatures in industrial or lighting ballast applications as long as the tab is properly heatsunk.