650 V CoolMOS CFD2 — fast-switching MOSFET with integrated fast body diode
Its 660 mΩ maximum on-resistance is specified at 10 V gate drive with a 2.1 A test current, and the total gate charge is just 22 nC at 10 V, keeping gate-drive losses low in high-frequency switching.
With a gate charge of 22 nC at 10 V, the IPD65R660CFD requires modest drive current to achieve fast switching edges. A typical gate-driver IC delivering 1 A peak can turn the device on in under 25 ns, which keeps cross-conduction losses low in hard-switched topologies like flyback or two-switch forward converters. The input capacitance is 615 pF at 100 V drain bias, so the driver's sink capability should be checked against the Miller plateau duration to avoid excessive switching loss at frequencies above 100 kHz.
Package and thermal — the DPak footprint
The PG-TO252-3-313 (DPak) package has three pins plus a tab that is internally connected to the drain.