Infineon CoolMOS™ CE, N-Channel MOSFET, 650 V, 7 A, 650 mOhm @ 2.1 A, 10 V, 23 nC @ 10 V, PG-TO252-3, -40°C to 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CE |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7A (Tc) |
| Power dissipation | 86W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.5V @ 210µA |
| Rds on (Max) @ id, vgs | 650mOhm @ 2.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 23 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 440 pF @ 100 V |
The IPD65R650CEAUMA1: The 650 V drain-to-source voltage rating suits offline flyback and PFC stages. Gate charge is 23 nC at 10 V.
Maximum power dissipation is 86 W at case temperature. Input capacitance Ciss is 440 pF at 100 V drain-source.
Yes, the part is ROHS3 compliant.