650 V CoolMOS N-channel — switching loss and thermal budget
The Infineon IPD65R600E6 is a 650 V N-channel CoolMOS power MOSFET in a DPak (TO-252) surface-mount package. It is designed for hard-switching topologies where low gate charge and fast body-diode recovery reduce switching losses. The 23 nC total gate charge at 10 V keeps the drive power manageable at moderate switching frequencies.
At 600 mOhm max, the on-resistance is moderate for a 650 V device — the part suits applications where conduction loss is secondary to switching loss, such as in auxiliary power supplies and flyback converters. Input capacitance is 440 pF at 100 V Vds, which limits the drive current needed at frequencies up to 100 kHz.
ROHS3 compliant; no lead-frame finish concerns for RoHS-sensitive BOM lines. No stock-holding claim; quote per BOM quantity.
