650 V CoolMOS N-channel — switching loss and thermal budget
It is designed for hard-switching topologies where low gate charge and fast body-diode recovery reduce switching losses.
At 600 mOhm max, the on-resistance is moderate for a 650 V device — the part suits applications where conduction loss is secondary to switching loss, such as in auxiliary power supplies and flyback converters. Input capacitance is 440 pF at 100 V Vds, which limits the drive current needed at frequencies up to 100 kHz.
ROHS3 compliant; no lead-frame finish concerns for RoHS-sensitive BOM lines. No stock-holding claim; quote per BOM quantity.