On-resistance and gate drive — sizing the conduction loss
Maximum on-resistance is 420 mOhm at 3.4 A drain current with a 10 V gate drive. That 10 V drive voltage is the nominal for achieving the rated Rds(on); the part's gate threshold is 4.5 V maximum at 345 µA, so a 10 V rail is the practical choice for a saturated switch. At 8.7 A the conduction loss is I²R — roughly 32 W at the maximum Rds(on) — which sits inside the 83.3 W package power limit at case temperature, but the designer should derate for ambient and switching losses.
Temperature range and automotive qualification
Junction temperature range is -40 °C to 150 °C, covering the full automotive under-hood requirement. The AEC-Q101 qualification means the part has passed the stress tests for high-reliability automotive applications — thermal cycling, high-temperature reverse bias, and humidity. For an ECU or a DC-DC converter in a hybrid powertrain, this is the qualification that matters.
Package and mounting
The PG-TO252-3 (DPAK) package has two leads plus a tab that is the drain connection. Surface-mount assembly is standard; the tab is soldered to a copper pad on the PCB for thermal dissipation. The supplier device package code is PG-TO252-3 — the Infineon variant of the DPAK outline.
Lifecycle and sourcing
The IPD65R420CFDAATMA1 is listed as Active in production with ROHS3 compliance. It is available through independent distribution and is quoted to order against an RFQ. No end-of-life notice or last-time-buy schedule is on record for this part.