Infineon CoolMOS™ IPD65R400CEAUMA1, N-Channel MOSFET, 650 V Vdss, 15.1 A Id, 400 mOhm Rds(on) at 10 V, PG-TO252-3 package, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 15.1A (Tc) |
| Power dissipation | 118W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.5V @ 320µA |
| Rds on (Max) @ id, vgs | 400mOhm @ 3.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 39 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 710 pF @ 100 V |
At 100 kHz switching, the gate-drive power requirement is roughly Qg × Vgs × fsw = 39 nC × 10 V × 100 kHz = 39 mW — easily met by a standard driver. The moderate capacitance keeps the switching transition losses manageable without excessive drive current.
The ±20 V maximum gate rating gives headroom against gate-drive overshoot in hard-switched topologies.
The maximum on-resistance is 400 mOhm at a drain current of 3.2 A and a gate drive of 10 V.
Yes, it is rated ROHS3 Compliant.
It is supplied in a PG-TO252-3 package, also known as TO-252-3, DPak (2 Leads + Tab), SC-63.
The IPD50R950CEAUMA1 is a lower-current variant in the same CoolMOS™ CE family: it has a 500 V drain rating, 4.3 A continuous current, 950 mOhm Rds(on), and 10.5 nC gate charge — suited for lighter loads where the 400 mOhm device is overkill.