IPD65R380E6
IPD65R380E6 - Infineon Technologies
MPNIPD65R380E6
End of Life
MOSFET N-CH 650V 10.6A TO252-3
$0.98Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesCoolMOS™ E6
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS™ E6 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Current - continuous drain (Id) @ 25°C | 10.6A (Tc) |
| Power dissipation | 83W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.5V @ 320µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 3.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 39 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 710 pF @ 100 V |