Infineon CoolMOS™ C7 series, IPD65R225C7ATMA1, N-Channel MOSFET, 650 V Vdss, 11 A Id, 225 mOhm Rds(on) at 10 V, 20 nC Qg, PG-TO252-3, -55°C to 150°C junction.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ C7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 63W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 240µA |
| Rds on (Max) @ id, vgs | 225mOhm @ 4.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 996 pF @ 400 V |
The IPD65R225C7ATMA1 is an Infineon CoolMOS™ C7 N-channel power MOSFET in a surface-mount PG-TO252-3 (DPak) package.
The 650 V drain-source breakdown voltage gives headroom above the 400 V DC bus typical in universal-input offline converters. The 996 pF input capacitance at 400 V drain-source is moderate.
The maximum on-resistance is 225 mOhm at 4.8 A drain current and 10 V gate drive. This is the conduction-loss spec for thermal design in the TO-252 package.
The total gate charge is 20 nC at 10 V gate drive. This low Qg relative to the 225 mOhm Rds(on) suits switching frequencies above 100 kHz without overloading the gate driver.
Yes, Infineon lists it as ROHS3 Compliant.