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Infineon Technologies IPD65R225C7ATMA1
Infineon Technologies

Infineon IPD65R225C7ATMA1 CoolMOS C7 N-Ch MOSFET, 650V, 11A

MPNIPD65R225C7ATMA1
End of Life

Infineon CoolMOS™ C7 series, IPD65R225C7ATMA1, N-Channel MOSFET, 650 V Vdss, 11 A Id, 225 mOhm Rds(on) at 10 V, 20 nC Qg, PG-TO252-3, -55°C to 150°C junction.

$2.7Ref. price · indicative, final on quote
IPD65R225C7ATMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD65R225C7ATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ C7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation63W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 240µA
Rds on (Max) @ id, vgs225mOhm @ 4.8A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds996 pF @ 400 V

Product details

225 mOhm Rds(on) at 10 V — conduction loss anchor

The IPD65R225C7ATMA1 is an Infineon CoolMOS™ C7 N-channel power MOSFET in a surface-mount PG-TO252-3 (DPak) package. The 20 nC typical gate charge at 10 V keeps the gate-drive reactive load low.

650 V Vdss and 11 A continuous drain

The 650 V drain-source breakdown voltage gives headroom above the 400 V DC bus typical in universal-input offline converters. The 996 pF input capacitance at 400 V drain-source is moderate.

For a BOM line, this removes the obsolescence risk — no need to stockpile or qualify a substitute.

Temperature grade and design environment

The 4 V maximum gate threshold at 240 µA drain current means a standard 10 V gate drive from a PWM controller or driver IC turns the device fully on without marginal drive voltage.

Frequently asked questions

What is the Rds(on) of IPD65R225C7ATMA1?

The maximum on-resistance is 225 mOhm at 4.8 A drain current and 10 V gate drive. This is the conduction-loss spec for thermal design in the TO-252 package.

What is the gate charge of IPD65R225C7ATMA1?

The total gate charge is 20 nC at 10 V gate drive. This low Qg relative to the 225 mOhm Rds(on) suits switching frequencies above 100 kHz without overloading the gate driver.

Is IPD65R225C7ATMA1 RoHS compliant?

Yes, Infineon lists it as ROHS3 Compliant.