Infineon CoolMOS™ C7 series, N-Channel MOSFET, 650 V Vdss, 13 A continuous drain current, 190 mOhm Rds(on) at 10 V, 23 nC gate charge, PG-TO252-3 surface-mount package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ C7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 13A (Tc) |
| Power dissipation | 72W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 290µA |
| Rds on (Max) @ id, vgs | 190mOhm @ 5.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 23 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1150 pF @ 400 V |
The 1150 pF input capacitance at 400 V drain-source confirms the low-Qg design.
At 190 mOhm max, the Rds(on) is competitive for a 650 V device in this package.
The PG-TO252-3 package is a standard DPAK with a single exposed drain tab; it reflows on a standard lead-free profile and is compatible with wave solder for through-hole variants.
ROHS3 compliant.
The 650 V rating and 190 mOhm Rds(on) target high-voltage switched-mode power supplies, power factor correction stages, flyback converters, and LLC resonant converters in the 100–300 W range, as well as auxiliary power supplies in industrial and telecom equipment.