650 V CoolMOS C7 — the SMPS workhorse in a TO252
The IPD65R190C7ATMA1: The 23 nC typical gate charge at 10 V keeps switching losses manageable. The 1150 pF input capacitance at 400 V drain-source confirms the low-Qg design.
At 190 mOhm max, the Rds(on) is competitive for a 650 V device in this package. The 72 W maximum power dissipation at case temperature assumes a properly soldered tab with adequate copper area. A 10 V gate drive is required to achieve the rated Rds(on); driving at lower voltage increases on-resistance significantly, so the supply rail for the gate driver should be regulated to 10 V or above.
Temperature range and mounting — field-fit for harsh environments
The PG-TO252-3 package is a standard DPAK with a single exposed drain tab; it reflows on a standard lead-free profile and is compatible with wave solder for through-hole variants.
ROHS3 compliant.
