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Infineon Technologies IPD650P06NMATMA1

IPD650P06NMATMA1 P-Channel MOSFET, 60V 22A, 65mOhm Rds(on)

MPNIPD650P06NMATMA1
End of Life

Infineon OptiMOS P-Channel MOSFET, IPD650P06NMATMA1, 60V Vdss, 22A Id, 65mOhm Rds(on) at 10V Vgs, 39nC Qg, TO-252-3 (DPak) package, -55°C to 175°C.

$1.62Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD650P06NMATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C22A (Tc)
Power dissipation83W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 1.04mA
Rds on (Max) @ id, vgs65mOhm @ 22A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 30 V

Product details

P-channel load switch for 60V rails

It comes in a TO-252-3 (DPak) surface-mount package with the PG-TO252-3-313 supplier code. P-channel devices simplify high-side switching by eliminating the need for a charge-pump gate driver — the source connects to the positive rail and the gate is pulled low to turn on.

On-resistance and gate charge — the switching loss trade-off

That figure sets the conduction loss floor — at 22 A the I²R dissipation is about 31 W, which must be within the 83 W power-dissipation ceiling at the case. The 39 nC total gate charge at 10 V tells you the gate-driver current needed: a 1 A driver charges the gate in roughly 39 ns, but a 100 mA logic-level driver will stretch the switching edge and increase crossover loss. Input capacitance Ciss is 1600 pF at 30 V drain-source. That is moderate for a 60 V P-channel — the Miller plateau will be manageable with a standard totem-pole driver, but a weak pull-up resistor will slow the turn-off ramp.

Temperature range and package — where it survives

Junction temperature range is -55°C to 175°C, which puts it in the military-grade thermal envelope. That 175°C ceiling is the absolute limit for the silicon; the DPak copper tab on the TO-252-3 must be soldered to a sufficient board copper area to keep the junction below 150°C in continuous operation.

Frequently asked questions

What is the Rds(on) of IPD650P06NMATMA1 at 10V Vgs?

The maximum on-resistance is 65 mOhm at 10 V gate drive with 22 A drain current. That is the spec to use for worst-case conduction-loss budgeting.

What is the gate charge (Qg) of IPD650P06NMATMA1?

Total gate charge is 39 nC at 10 V. This determines the gate-driver current needed for a given switching frequency — a 1 A driver will switch it in about 39 ns.

Is IPD650P06NMATMA1 RoHS compliant?

Yes, it carries ROHS3 compliance status.