Skip to main content
Infineon Technologies IPD60R950C6ATMA1

Infineon IPD60R950C6ATMA1 CoolMOS C6 N-Ch MOSFET, 600V 4.4A

MPNIPD60R950C6ATMA1
End of Life

Infineon CoolMOS™ C6, N-Channel MOSFET, 600 V Vdss, 4.4 A continuous drain, 950 mOhm Rds(on) at 10 V, 13 nC gate charge, PG-TO252-3 package, -55 to 150 °C operating temperature.

$1.19Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD60R950C6ATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ C6
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.4A (Tc)
Power dissipation37W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 130µA
Rds on (Max) @ id, vgs950mOhm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds280 pF @ 100 V

Product details

The IPD60R950C6ATMA1 is housed in a PG-TO252-3 (DPak) surface-mount package. At 4.4 A, the I²R loss is about 18.4 W at full rated current — well within the 37 W power dissipation capability at the case, but the junction-to-ambient thermal path in a TO-252 demands a decent copper area on the drain tab for any continuous load above a few amps.

Gate charge and switching speed — why 13 nC matters

Total gate charge is 13 nC at 10 V gate drive. This is low enough that a small-signal MOSFET driver or a PWM controller totem-pole can switch the device at 100 kHz+ without excessive drive losses. The 280 pF input capacitance at 100 V drain bias confirms a modest capacitive load on the drive stage. The threshold voltage range (3.5 V maximum at 130 µA) means a 10 V gate drive is needed to achieve the rated Rds(on).

Temperature range and package — board-level fit

Moisture sensitivity level is not explicitly stated in this listing.

Frequently asked questions

Can IPD60R950C6ATMA1 be used in 600 V applications?

Yes, the drain-source voltage rating is 600 V, making it suitable for 600 V bus converters, PFC stages, and flyback converters with a 400 V DC link plus margin. The 4.4 A continuous current rating supports typical 50–100 W offline supplies.