Infineon Technologies · CoolMOS™ P7 Series
Infineon CoolMOS™ P7 series, IPD60R600P7ATMA1, N-Channel MOSFET, 650 V Vdss, 6 A Id, 600 mOhm Rds(on) at 10 V, 9 nC gate charge, PG-TO252-3 package, -55°C to 150°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 80µA |
| Rds on (Max) @ id, vgs | 600mOhm @ 1.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 363 pF @ 400 V |
The PG-TO252-3 (DPak) package suits standard surface-mount reflow assembly and can be paired with a copper-land heatsink on the PCB for thermal management.
Gate charge is 9 nC at 10 V. Input capacitance is 363 pF at 400 V drain-source.