Infineon Technologies · CoolMOS™ C6 Series
Infineon CoolMOS™ C6 series, IPD60R3K3C6ATMA1, N-Channel MOSFET, 600 V Vdss, 1.7 A Id, 3.3 Ohm Rds(on) @ 500 mA, 10 V, 4.6 nC Qg, TO-252-3 (DPak) package, -55°C to 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | CoolMOS™ C6 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 1.7A (Tc) |
| Power dissipation | 18.1W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.5V @ 40µA |
| Rds on (Max) @ id, vgs | 3.3Ohm @ 500mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 4.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 93 pF @ 100 V |
The IPD60R3K3C6ATMA1: The 4.6 nC typical gate charge keeps switching losses low in flyback or PFC auxiliary windings where the current is modest but the voltage rail is high.
With 3.3 Ohm Rds(on) this part is optimised for low-current paths — think bias supplies, start-up circuits, or clamp switches where conduction loss is secondary to fast turn-on.
