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Infineon Technologies IPD60R360P7ATMA1
Infineon Technologies

IPD60R360P7ATMA1 Infineon CoolMOS P7 N-Ch 600V 9A MOSFET

MPNIPD60R360P7ATMA1
End of Life

Infineon CoolMOS™ P7, N-Channel MOSFET, 600 V Vdss, 9 A Id @ 25°C, 360 mOhm Rds(on) @ 2.7 A, 10 V, ±20 Vgs, 13 nC Qg, 555 pF Ciss @ 400 V, -55°C to 150°C TJ, PG-TO252-3, Surface Mount.

$1.93Ref. price · indicative, final on quote
IPD60R360P7ATMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD60R360P7ATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation41W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 140µA
Rds on (Max) @ id, vgs360mOhm @ 2.7A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds555 pF @ 400 V

Product details

Gate charge and switching behaviour

The IPD60R360P7ATMA1: Total gate charge is 13 nC at 10 V. The 555 pF input capacitance at 400 V Vds keeps switching losses manageable in hard-switched topologies.

Temperature range and derating

Junction temperature range spans -55°C to 150°C. The 41 W maximum power dissipation at case temperature is the package limit.

Lifecycle and compliance

Listed as Active in production — no last-time-buy notice or obsolescence risk for new designs. ROHS3 compliant, so it passes the substance restrictions for EU and global markets.

Frequently asked questions

What is the Rds(on) of IPD60R360P7ATMA1?

The maximum on-resistance is 360 mOhm at 2.7 A drain current and 10 V gate-source voltage. This is the figure to use for conduction loss calculations in the steady-state operating point.

Is IPD60R360P7ATMA1 RoHS compliant?

Yes, it is ROHS3 Compliant, meeting the latest EU restriction-of-hazardous-substances directive.

What are equivalent parts to IPD60R360P7ATMA1?

Pin-compatible alternatives within the CoolMOS P7 family share the same PG-TO252-3 footprint and 600 V rating but differ in Rds(on) and current rating. The 360 mOhm variant is the mid-range on-resistance option; a lower Rds(on) part (e.g., 280 mOhm) reduces conduction loss at higher current, while a higher Rds(on) part (e.g., 500 mOhm) suits cost-optimised designs with lower load current. Cross-reference by checking the CoolMOS P7 series selection guide for the exact Rds(on) and current that match your thermal budget.