Infineon CoolMOS™ P7, N-Channel MOSFET, 600 V Vdss, 9 A Id @ 25°C, 360 mOhm Rds(on) @ 2.7 A, 10 V, ±20 Vgs, 13 nC Qg, 555 pF Ciss @ 400 V, -55°C to 150°C TJ, PG-TO252-3, Surface Mount.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power dissipation | 41W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 140µA |
| Rds on (Max) @ id, vgs | 360mOhm @ 2.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 555 pF @ 400 V |
The IPD60R360P7ATMA1: Total gate charge is 13 nC at 10 V. The 555 pF input capacitance at 400 V Vds keeps switching losses manageable in hard-switched topologies.
Junction temperature range spans -55°C to 150°C.
Listed as Active in production — no last-time-buy notice or obsolescence risk for new designs.
The maximum on-resistance is 360 mOhm at 2.7 A drain current and 10 V gate-source voltage. This is the figure to use for conduction loss calculations in the steady-state operating point.
Yes, it is ROHS3 Compliant, meeting the latest EU restriction-of-hazardous-substances directive.
Pin-compatible alternatives within the CoolMOS P7 family share the same PG-TO252-3 footprint and 600 V rating but differ in Rds(on) and current rating. The 360 mOhm variant is the mid-range on-resistance option; a lower Rds(on) part (e.g., 280 mOhm) reduces conduction loss at higher current, while a higher Rds(on) part (e.g., 500 mOhm) suits cost-optimised designs with lower load current. Cross-reference by checking the CoolMOS P7 series selection guide for the exact Rds(on) and current that match your thermal budget.