Infineon Technologies · CoolMOS™ CFD7 Series
Infineon CoolMOS™ CFD7, N-Channel MOSFET, 650 V, 7 A, 360 mOhm @ 2.9 A, 10 V, 14 nC gate charge @ 10 V, PG-TO252-3-313, -55 to 150 °C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | CoolMOS™ CFD7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7A (Tc) |
| Power dissipation | 43W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 140µA |
| Rds on (Max) @ id, vgs | 360mOhm @ 2.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 679 pF @ 400 V |
The IPD60R360CFD7ATMA1: The PG-TO252-3-313 (DPak / TO-252-3) package is a surface-mount DPAK with two leads and a tab. The tab is the drain connection and must be soldered to a suitable copper area on the PCB for thermal management.
ROHS3 compliant. This part is expected to remain available for new designs and production ramps.
