Infineon CoolMOS™ CFD7, N-Channel MOSFET, 650 V, 7 A, 360 mOhm @ 2.9 A, 10 V, 14 nC gate charge @ 10 V, PG-TO252-3-313, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CFD7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7A (Tc) |
| Power dissipation | 43W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 140µA |
| Rds on (Max) @ id, vgs | 360mOhm @ 2.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 679 pF @ 400 V |
The IPD60R360CFD7ATMA1: The PG-TO252-3-313 (DPak / TO-252-3) package is a surface-mount DPAK with two leads and a tab. The tab is the drain connection and must be soldered to a suitable copper area on the PCB for thermal management.
ROHS3 compliant. This part is expected to remain available for new designs and production ramps.
No, the lifecycle status is Active. No end-of-life notification has been issued for this part.