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Infineon Technologies IPD60R2K1CEAUMA1

Infineon IPD60R2K1CEAUMA1 CoolMOS™ CE N-Ch 600V 2.3A MOSFET

MPNIPD60R2K1CEAUMA1
End of Life

Infineon CoolMOS™ CE series, N-Channel MOSFET, 600 V drain-source, 2.3 A continuous drain, 2.1 Ohm Rds(on) at 10 V, PG-TO252-3 package, -40 to 150 °C junction temperature.

$0.64Ref. price · indicative, final on quote
Infineon Technologies IPD60R2K1CEAUMA1 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesCoolMOS™ CE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD60R2K1CEAUMA1 specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.3A (Tc)
Power dissipation38W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 60µA
Rds on (Max) @ id, vgs2.1Ohm @ 760mA, 10V
Gate charge (Qg) (Max) @ vgs6.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds140 pF @ 100 V

Product details

The IPD60R2K1CEAUMA1 CoolMOS™ CE N-Channel MOSFET has a 2.1 Ohm Rds(on) at 10 V and a 6.7 nC gate charge.

Voltage class and current rating — sizing the rail

The 600 V Vdss rating places this part in the standard 600 V class for offline converters, LED drivers, and auxiliary power supplies. Continuous drain current is 2.3 A at 25 °C case temperature — derate to roughly 1.5 A at 100 °C case using the typical 0.65× factor for a TO-252 package.

PG-TO252-3 (DPak) surface-mount package with a single exposed drain tab.

Frequently asked questions

What is the Rds(on) for IPD60R2K1CEAUMA1?

Maximum Rds(on) is 2.1 Ohm at 760 mA drain current with 10 V gate drive. This is the on-resistance at 25 °C junction; expect it to increase by about 40–50 % at 125 °C junction temperature, per the typical CoolMOS™ CE temperature coefficient.