The IPD60R2K1CEAUMA1 CoolMOS™ CE N-Channel MOSFET has a 2.1 Ohm Rds(on) at 10 V and a 6.7 nC gate charge.
Voltage class and current rating — sizing the rail
The 600 V Vdss rating places this part in the standard 600 V class for offline converters, LED drivers, and auxiliary power supplies. Continuous drain current is 2.3 A at 25 °C case temperature — derate to roughly 1.5 A at 100 °C case using the typical 0.65× factor for a TO-252 package. The 38 W power dissipation ceiling at the case means the board copper and airflow must keep the junction below 150 °C in the target load profile.
Package and thermal path
PG-TO252-3 (DPak) surface-mount package with a single exposed drain tab. The tab is the primary thermal path — a 600 mm² copper pad on the top layer drops RthJA significantly versus a minimal pad layout. The 140 pF input capacitance at 100 V drain bias keeps the gate-drive energy per cycle low, which helps in high-density layouts where the driver IC sits close to the MOSFET.