600 V, 12 A N-channel MOSFET for high-voltage switching
It is built for hard-switching topologies such as flyback converters, PFC stages, and LLC resonant converters in AC-DC power supplies and lighting ballasts.
Gate charge and switching performance
Total gate charge is 18 nC at 10 V, a light load for the gate driver. At a 100 kHz switching frequency the average gate-drive current is under 2 mA, keeping the driver's dissipation low. The 761 pF input capacitance at 400 V drain-source confirms the device is optimised for moderate-speed switching rather than ultra-fast GaN-class edges.
Package and thermal handling
Housed in a TO-252-3 (DPak) surface-mount package with a drain tab (PG-TO252-3). Maximum power dissipation is 53 W at case temperature, but the real thermal limit depends on the PCB copper area under the tab — a 1-inch-square pad on a 2-oz board typically keeps junction rise within the -40°C to 150°C operating range.