IPD60R280CFD7ATMA1

Infineon Technologies · CoolMOS™ CFD7 Series

Infineon CoolMOS™ CFD7, N-Channel MOSFET, 600 V drain-source, 9 A continuous drain, 280 mOhm Rds(on) max at 10 V, 18 nC gate charge, PG-TO252-3 package, -55 to 150 °C operating junction temperature.

Infineon Technologies IPD60R280CFD7ATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPD60R280CFD7ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ CFD7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation51W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 180µA
Rds on (Max) @ id, vgs280mOhm @ 3.6A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds807 pF @ 400 V

Technical details

600 V, 280 mOhm — CFD7 class for hard-switching topologies

The IPD60R280CFD7ATMA1: Gate charge totals 18 nC at 10 V.

Active production — no LTB shadow

The 600 V Vdss rating gives margin for offline converters with a 400 V DC bus. Input capacitance is 807 pF at 400 V drain. Operating junction temperature spans -55 to 150 °C.

IPD60R280CFD7ATMA1
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