Infineon CoolMOS™ CFD7, N-Channel MOSFET, 600 V drain-source, 9 A continuous drain, 280 mOhm Rds(on) max at 10 V, 18 nC gate charge, PG-TO252-3 package, -55 to 150 °C operating junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CFD7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power dissipation | 51W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 180µA |
| Rds on (Max) @ id, vgs | 280mOhm @ 3.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 807 pF @ 400 V |
The IPD60R280CFD7ATMA1: Gate charge totals 18 nC at 10 V.
The 600 V Vdss rating gives margin for offline converters with a 400 V DC bus. Input capacitance is 807 pF at 400 V drain. Operating junction temperature spans -55 to 150 °C.
This is the value used for worst-case conduction loss calculations in the power stage design.
Yes, it is ROHS3 compliant, meaning it meets the latest EU restriction-of-hazardous-substances directive for lead and other restricted materials.
The IPD60R280CFD7ATMA1 is the current CFD7 series part at this voltage and on-resistance tier. The IPD60R280CE is an older CoolMOS CE series device with a 500 V rating and higher Rds(on) of 950 mOhm — not a direct functional replacement for the 600 V, 280 mOhm CFD7.