Infineon CoolMOS™PFD7 series, N-Channel MOSFET, 650V drain-source, 3.6A continuous drain, 1.5 Ohm Rds(on) at 10V gate, TO-252-3 (DPak) package, -40°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™PFD7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3.6A (Tc) |
| Power dissipation | 22W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 40µA |
| Rds on (Max) @ id, vgs | 1.5Ohm @ 700mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 4.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 169 pF @ 400 V |
The IPD60R1K5PFD7SAUMA1: Input capacitance is 169 pF at 400 V drain-source, which is low enough that the switching losses at moderate frequencies won't dominate.
The TO-252-3 (DPak) footprint is a common surface-mount power package. The supplier device package is PG-TO252-3-344.
The maximum continuous drain current is 3.6 A at 25°C case temperature. Derate for higher ambient temperatures and limited heatsinking.
Yes, it is ROHS3 compliant.
No direct equivalent or second-source is listed in the Infineon CoolMOS™PFD7 family. For a pin-compatible alternative, look at other parts in the same series with a different Rds(on) or current rating that matches your design requirements.