600 V N-channel MOSFET for switched-mode power conversion
The IPD60R1K4C6ATMA1 N-channel MOSFET has a 1.4 Ohm maximum on-resistance at 1.1 A with 10 V gate drive.
The 9.4 nC total gate charge at 10 V requires modest drive current.
Maximum power dissipation is 28.4 W at case temperature — the DPAK tab must be soldered to a sufficient copper area on the PCB to keep the junction below 150°C at full load. The 3.5 V maximum gate threshold at 90 µA drain current means the part turns on cleanly with standard 10 V gate drive.
Housed in a PG-TO252-3 (DPAK) package with two leads plus the drain tab, this is a standard surface-mount power MOSFET footprint.
No official successor or second-source alternate is listed on the record.