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Infineon Technologies IPD60R1K4C6ATMA1
Infineon Technologies

IPD60R1K4C6ATMA1 CoolMOS™ C6 N-Ch MOSFET, 600V 3.2A DPAK

MPNIPD60R1K4C6ATMA1
End of Life

Infineon CoolMOS™ C6 series, N-Channel MOSFET, 600 V drain-source, 3.2 A continuous drain, 1.4 Ohm Rds(on) at 10 V gate drive, 9.4 nC gate charge, DPAK (TO-252-3) surface-mount package, -55°C to 150°C junction temperature.

$0.9Ref. price · indicative, final on quote
IPD60R1K4C6ATMA1 datasheet
PackagingTO-252-3, DPAK (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD60R1K4C6ATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ C6
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.2A (Tc)
Power dissipation28.4W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 90µA
Rds on (Max) @ id, vgs1.4Ohm @ 1.1A, 10V
Gate charge (Qg) (Max) @ vgs9.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds200 pF @ 100 V

Product details

600 V N-channel MOSFET for switched-mode power conversion

The IPD60R1K4C6ATMA1 N-channel MOSFET has a 1.4 Ohm maximum on-resistance at 1.1 A with 10 V gate drive.

Gate charge and switching performance

The 9.4 nC total gate charge at 10 V requires modest drive current.

Temperature range and thermal budget

Maximum power dissipation is 28.4 W at case temperature — the DPAK tab must be soldered to a sufficient copper area on the PCB to keep the junction below 150°C at full load. The 3.5 V maximum gate threshold at 90 µA drain current means the part turns on cleanly with standard 10 V gate drive.

Package and footprint

Housed in a PG-TO252-3 (DPAK) package with two leads plus the drain tab, this is a standard surface-mount power MOSFET footprint. The ±20 V maximum gate-source rating provides margin against gate-drive overshoot in hard-switching topologies.

Lifecycle and compliance

No official successor or second-source alternate is listed on the record.

Frequently asked questions

Does IPD60R1K4C6ATMA1 work in high-frequency switching?

Yes, within limits. The 9.4 nC total gate charge at 10 V and 200 pF input capacitance at 100 V drain-source indicate the part is designed for efficient switching in the 50-150 kHz range typical of flyback and PFC converters. Above 200 kHz the gate-drive losses and switching losses may become significant.

Can I use IPD60R1K4C6ATMA1 in a 400V power supply?

Yes. The 600 V drain-source voltage rating provides 200 V of headroom above a 400 V DC bus, which is standard practice for flyback and PFC stages in off-line power supplies. The 3.2 A continuous drain rating at 25°C supports typical 50-100 W output power levels in a single-switch topology.