600 V, 18 A N-channel CoolMOS P7 in a TO-252-3
The Infineon IPD60R180P7SAUMA1 is a 600 V N-channel MOSFET from the CoolMOS series, rated for 18 A continuous drain current at 25 °C case temperature. It comes in a PG-TO252-3 (DPak) surface-mount package, with a maximum junction temperature of 150 °C. The 180 mOhm on-resistance at 10 V gate drive and 5.6 A is the key conduction-loss figure for a hard-switched power stage — expect to size the heatsink around the 72 W dissipation limit at Tc.
180 mOhm Rds(on) — what it means for the switching stage
At Vgs = 10 V, the 180 mOhm maximum on-resistance (measured at 5.6 A) sets the conduction loss in a typical 400 VDC bus application. Compare that to the CoolMOS CE sibling IPD50R950CEAUMA1, which carries a 950 mOhm Rds(on) at 1.2 A — the P7 part here is the lower-loss choice for a given current, though the CE part may suit lower-power auxiliary supplies where the higher Rds(on) is acceptable.
Gate drive and switching budget
Total gate charge is 25 nC at 10 V, and input capacitance (Ciss) is 1081 pF at 400 V drain-source. A standard gate-driver IC can switch this MOSFET at moderate frequencies without excessive drive power.
Lifecycle and compliance
The IPD60R180P7SAUMA1 is listed as Active with ROHS3 compliance — no last-time-buy risk, and it is ready for lead-free assembly. The CoolMOS series is Infineon's current-generation high-voltage MOSFET platform, so this part is suitable for new designs and production builds.