600 V, 18 A N-channel CoolMOS P7 in a TO-252-3
It comes in a PG-TO252-3 (DPak) surface-mount package, with a maximum junction temperature of 150 °C. The 180 mOhm on-resistance at 10 V gate drive and 5.6 A is the key conduction-loss figure for a hard-switched power stage — expect to size the heatsink around the 72 W dissipation limit at Tc.
At Vgs = 10 V, the 180 mOhm maximum on-resistance (measured at 5.6 A) sets the conduction loss in a typical 400 VDC bus application. Compare that to the CoolMOS CE sibling IPD50R950CEAUMA1, which carries a 950 mOhm Rds(on) at 1.2 A — the P7 part here is the lower-loss choice for a given current, though the CE part may suit lower-power auxiliary supplies where the higher Rds(on) is acceptable.
A standard gate-driver IC can switch this MOSFET at moderate frequencies without excessive drive power.
