Rds(on) and gate charge — the switching pair that defines the design
The 950 mOhm Rds(on) at 1.2 A and 13 V gate drive sets the conduction-loss floor for a given output current. Paired with a 10.5 nC typical gate charge at 10 V, this FET can be driven by a low-cost gate-drive transformer or a simple driver IC without excessive cross-conduction delay. The 231 pF input capacitance at 100 V drain-source confirms fast switching edges — useful for keeping switching losses low in quasi-resonant or critical-conduction-mode topologies.
Lifecycle and compliance — active, RoHS3, no LTB clock
The IPD50R950CEAUMA1 carries an Active product status and is RoHS3 compliant. No last-time-buy or end-of-life notification is in effect, so it remains a safe choice for new BOM entries and production replenishment. The CoolMOS CE series is a current-generation offering, not a phase-out design.
Package and mounting — DPAK for standard reflow
Housed in the PG-TO252-3-344 (DPAK) surface-mount package, this MOSFET uses the standard DPAK footprint with a tab for thermal dissipation. The -55 °C to 150 °C junction temperature range covers industrial and automotive ambient environments, though the 53 W maximum power dissipation at case temperature requires a properly sized copper area or heatsink on the drain tab for sustained high-load operation.