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Infineon Technologies IPD50R950CEAUMA1 — Discrete Semiconductors

IPD50R950CEAUMA1 CoolMOS CE N-Ch MOSFET, 500 V, 950 mOhm

MPNIPD50R950CEAUMA1
End of Life

Infineon CoolMOS™ CE series, IPD50R950CEAUMA1, N-Channel MOSFET, 500 V Vdss, 950 mOhm Rds(on) at 1.2 A, 4.3 A continuous drain, PG-TO252-3-344 (DPAK), -55 to 150 °C.

$0.61Ref. price · indicative, final on quote
Infineon Technologies IPD50R950CEAUMA1 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesCoolMOS™ CE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPD50R950CEAUMA1 specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C4.3A (Tc)
Power dissipation53W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 100µA
Rds on (Max) @ id, vgs950mOhm @ 1.2A, 13V
Gate charge (Qg) (Max) @ vgs10.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds231 pF @ 100 V

Product details

The 950 mOhm Rds(on) at 1.2 A and 13 V gate drive sets the conduction-loss floor for a given output current. Paired with a 10.5 nC typical gate charge at 10 V, this FET can be driven by a low-cost gate-drive transformer or a simple driver IC without excessive cross-conduction delay.

The CoolMOS CE series is a current-generation offering, not a phase-out design.

Package and mounting — DPAK for standard reflow

Housed in the PG-TO252-3-344 (DPAK) surface-mount package, this MOSFET uses the standard DPAK footprint with a tab for thermal dissipation. The -55 °C to 150 °C junction temperature range covers industrial and automotive ambient environments, though the 53 W maximum power dissipation at case temperature requires a properly sized copper area or heatsink on the drain tab for sustained high-load operation.

Frequently asked questions

What is the Rds(on) of IPD50R950CEAUMA1?

The maximum on-resistance is 950 mOhm at a drain current of 1.2 A and a gate drive of 13 V. That figure drives conduction loss calculations in the power stage.

Is IPD50R950CEAUMA1 RoHS compliant?

Yes — it is RoHS3 compliant, per the manufacturer's classification.

What is the gate charge of IPD50R950CEAUMA1?

The typical gate charge is 10.5 nC at a 10 V gate drive. This low charge simplifies the gate-driver design and reduces switching losses.