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Infineon Technologies IPD50R650CEAUMA1

Infineon IPD50R650CEAUMA1 CoolMOS CE N-Ch MOSFET

MPNIPD50R650CEAUMA1
End of Life

Infineon CoolMOS™ CE series, IPD50R650CEAUMA1, N-Channel MOSFET, 500 V Vdss, 9 A Id, 650 mOhm Rds(on), 15 nC Qg, TO-252-3 (DPak), -55 to 150 °C.

$0.87Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesCoolMOS™ CE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD50R650CEAUMA1 specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 150µA
Rds on (Max) @ id, vgs650mOhm @ 1.8A, 13V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds342 pF @ 100 V

Product details

500 V N-channel CoolMOS CE — switching loss and thermal budget

It comes in a TO-252-3 (DPak) surface-mount package with an exposed tab for heat sinking. The 650 mOhm maximum on-resistance at 1.8 A and 13 V gate drive sets the conduction loss floor — at full rated current the I²R loss is about 53 W, which matches the 69 W package dissipation limit. Derate for ambient temperature above 25°C. Gate charge is 15 nC typical at 10 V, keeping switching losses low in hard-switched topologies like PFC or flyback converters up to about 100 kHz.

Package and thermal — the DPak tab matters

The PG-TO252-3-344 (DPak) package has a large copper tab on the drain. Without adequate copper, the 69 W dissipation rating is theoretical. The gate-source voltage is rated ±20 V absolute maximum — the 13 V drive level for minimum Rds(on) sits well inside that window, but a gate clamp zener is still good practice in noisy environments.

It is fully RoHS3 compliant.

Frequently asked questions

What is the Rds(on) of IPD50R650CEAUMA1?

The maximum Rds(on) is 650 mOhm at 1.8 A drain current with 13 V gate drive. This is the value used for conduction loss calculations in the design.