500 V N-channel CoolMOS CE — switching loss and thermal budget
It comes in a TO-252-3 (DPak) surface-mount package with an exposed tab for heat sinking. The 650 mOhm maximum on-resistance at 1.8 A and 13 V gate drive sets the conduction loss floor — at full rated current the I²R loss is about 53 W, which matches the 69 W package dissipation limit. Derate for ambient temperature above 25°C. Gate charge is 15 nC typical at 10 V, keeping switching losses low in hard-switched topologies like PFC or flyback converters up to about 100 kHz.
Package and thermal — the DPak tab matters
The PG-TO252-3-344 (DPak) package has a large copper tab on the drain. The PCB copper area under that tab sets the junction-to-ambient thermal resistance — a 1-inch² pad on a 2-oz copper layer keeps the junction below 125°C at 2 A continuous in still air. Without adequate copper, the 69 W dissipation rating is theoretical. The gate-source voltage is rated ±20 V absolute maximum — the 13 V drive level for minimum Rds(on) sits well inside that window, but a gate clamp zener is still good practice in noisy environments. Input capacitance is 342 pF at 100 V drain-source — this is low enough that a standard gate driver IC can charge the gate in under 50 ns without excessive peak current.
Lifecycle and compliance — active, RoHS3, no obsolescence risk
It is fully RoHS3 compliant.