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Infineon Technologies IPD50R500CEAUMA1
Infineon Technologies

IPD50R500CEAUMA1 CoolMOS™ CE N-Ch MOSFET, 500 V, 7.6 A

MPNIPD50R500CEAUMA1
End of Life

Infineon CoolMOS™ CE series, N-Channel MOSFET, 500 V drain-source, 7.6 A continuous drain, 500 mOhm Rds(on) at 13 V drive, PG-TO252-3 package, surface mount.

$0.87Ref. price · indicative, final on quote
IPD50R500CEAUMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD50R500CEAUMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C7.6A (Tc)
Power dissipation57W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 200µA
Rds on (Max) @ id, vgs500mOhm @ 2.3A, 13V
Gate charge (Qg) (Max) @ vgs18.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds433 pF @ 100 V

Product details

500 V, 7.6 A — CoolMOS™ CE in a TO-252

The IPD50R500CEAUMA1 is the 500 mOhm Rds(on) member of the CoolMOS™ CE family, packaged in a PG-TO252-3 (DPak) surface-mount package.

The 500 mOhm maximum on-resistance is specified at 2.3 A drain current with a 13 V gate drive — the recommended drive voltage for minimum Rds(on). At 13 V the gate charge is 18.7 nC, which keeps the gate drive energy per cycle low enough for a small-signal MOSFET driver or a PWM controller output. The input capacitance is 433 pF at 100 V drain-source, so the switching node capacitance is modest and helps maintain clean voltage waveforms in hard-switched topologies.

Thermal and package — what the TO-252 can deliver

Maximum power dissipation is 57 W at the case, with the junction temperature rated from -55 °C to 150 °C.

Frequently asked questions

Will the IPD50R500CEAUMA1 drop into a board designed for the IPD50R950CEAUMA1?

Yes — both parts share the same PG-TO252-3 package, 500 V drain-source rating, and ±20 V gate drive. The IPD50R500CEAUMA1 has a lower Rds(on) (500 mOhm vs 950 mOhm) and higher continuous drain current (7.6 A vs 4.3 A), so it is a direct electrical upgrade in the same footprint. No board rework is needed.