Infineon CoolMOS™ CE series, N-Channel MOSFET, 500 V drain-source, 7.6 A continuous drain, 500 mOhm Rds(on) at 13 V drive, PG-TO252-3 package, surface mount.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CE |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 13V |
| Current - continuous drain (Id) @ 25°C | 7.6A (Tc) |
| Power dissipation | 57W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.5V @ 200µA |
| Rds on (Max) @ id, vgs | 500mOhm @ 2.3A, 13V |
| Gate charge (Qg) (Max) @ vgs | 18.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 433 pF @ 100 V |
The IPD50R500CEAUMA1 is the 500 mOhm Rds(on) member of the CoolMOS™ CE family, packaged in a PG-TO252-3 (DPak) surface-mount package.
At 13 V the gate charge is 18.7 nC, which keeps the gate drive energy per cycle low enough for a small-signal MOSFET driver or a PWM controller output. The input capacitance is 433 pF at 100 V drain-source, so the switching node capacitance is modest and helps maintain clean voltage waveforms in hard-switched topologies.
Yes — both parts share the same PG-TO252-3 package, 500 V drain-source rating, and ±20 V gate drive. The IPD50R500CEAUMA1 has a lower Rds(on) (500 mOhm vs 950 mOhm) and higher continuous drain current (7.6 A vs 4.3 A), so it is a direct electrical upgrade in the same footprint. No board rework is needed.