The Infineon IPD50R500CE is a 500 V N-channel CoolMOS MOSFET in a TO-252-3 (DPak) surface-mount package. It is designed for high-voltage switching applications where low gate charge and fast switching are needed — think PFC stages, flyback converters, and auxiliary power supplies in industrial and telecom equipment. The 500 V drain-source rating gives the headroom needed for rectified 230 VAC or 400 VDC bus rails with derating for transients. On-resistance is specified at 500 mOhm maximum at 2.3 A with 13 V gate drive. This is a moderate Rds(on) for a 500 V device, which keeps the die small and the gate charge low — 18.7 nC typical at 10 V. The low gate charge means the driver sees a lighter load during switching transitions, which reduces crossover losses at higher frequencies. The 13 V drive voltage for rated Rds(on) is typical for CoolMOS; a standard 12 V gate drive rail will work, but the 13 V figure is the level at which the datasheet guarantees the on-resistance maximum.
The 150°C maximum junction allows the designer to push the thermal margin when the case is heatsunk to a hot chassis. Gate threshold voltage maximum is 3.5 V at 200 µA, which is a standard logic-level threshold — a 5 V or 3.3 V gate drive will turn the device on, though the Rds(on) will be higher than the 13 V rated value.
The IPD50R500CE is supplied in a TO-252-3 (DPak) package with two leads and a tab. The Infineon part marking is PG-TO252-3-344. The surface-mount DPak footprint is standard and shared across many 500 V CoolMOS variants, which simplifies second-sourcing on the layout. Input capacitance is 433 pF at 100 V drain-source, which is low for the voltage class and keeps the drive current requirement modest.
The part is RoHS-compliant per Infineon's standard lead-free plating on the DPak package.