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Infineon Technologies IPD50R500CE — Logic ICs
Infineon Technologies

Infineon IPD50R500CE CoolMOS N-Channel MOSFET, 500 V, 7.6 A

MPNIPD50R500CE
End of Life

Infineon CoolMOS IPD50R500CE, N-Channel MOSFET, 500 V Vdss, 7.6 A continuous drain, 500 mOhm Rds(on) at 2.3 A, TO-252-3 (DPak) surface mount, -55°C to 150°C junction temperature.

$0.39Ref. price · indicative, final on quote
IPD50R500CE datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
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Specifications

IPD50R500CE Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C7.6A (Tc)
Power dissipation57W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 200µA
Rds on (Max) @ id, vgs500mOhm @ 2.3A, 13V
Gate charge (Qg) (Max) @ vgs18.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds433 pF @ 100 V

Product details

The Infineon IPD50R500CE is a 500 V N-channel CoolMOS MOSFET in a TO-252-3 (DPak) surface-mount package. It is designed for high-voltage switching applications where low gate charge and fast switching are needed — think PFC stages, flyback converters, and auxiliary power supplies in industrial and telecom equipment. The 500 V drain-source rating gives the headroom needed for rectified 230 VAC or 400 VDC bus rails with derating for transients. Continuous drain current is rated 7.6 A at 25°C case temperature, which derates with junction temperature; the 57 W power dissipation ceiling sets the thermal budget for the PCB layout. On-resistance is specified at 500 mOhm maximum at 2.3 A with 13 V gate drive. This is a moderate Rds(on) for a 500 V device, which keeps the die small and the gate charge low — 18.7 nC typical at 10 V. The low gate charge means the driver sees a lighter load during switching transitions, which reduces crossover losses at higher frequencies. The 13 V drive voltage for rated Rds(on) is typical for CoolMOS; a standard 12 V gate drive rail will work, but the 13 V figure is the level at which the datasheet guarantees the on-resistance maximum.

Temperature range and operating environment

The 150°C maximum junction allows the designer to push the thermal margin when the case is heatsunk to a hot chassis. Gate threshold voltage maximum is 3.5 V at 200 µA, which is a standard logic-level threshold — a 5 V or 3.3 V gate drive will turn the device on, though the Rds(on) will be higher than the 13 V rated value.

Package and footprint considerations

The IPD50R500CE is supplied in a TO-252-3 (DPak) package with two leads and a tab. The Infineon part marking is PG-TO252-3-344. The surface-mount DPak footprint is standard and shared across many 500 V CoolMOS variants, which simplifies second-sourcing on the layout. Input capacitance is 433 pF at 100 V drain-source, which is low for the voltage class and keeps the drive current requirement modest.

Lifecycle and supply posture

The part is RoHS-compliant per Infineon's standard lead-free plating on the DPak package.

Frequently asked questions

What is the closest equivalent or replacement for the IPD50R500CE?

The IPD50R500CE is an active part with no official replacement announced. For a pin-compatible alternative within the same 500 V CoolMOS family, look at other Infineon DPak devices with similar Rds(on) and current ratings — the IPD50R500CE sits in the 500 mOhm, 7.6 A tier. Confirm the gate charge and threshold voltage match the drive circuit before substituting.

Is the IPD50R500CE RoHS compliant?

The IPD50R500CE is RoHS compliant. Infineon's standard DPak plating is lead-free (NiPdAu or matte tin). No RoHS exemption applies to this part number.