Infineon CoolMOS™ IPD50R380CEAUMA1, N-Channel Super Junction MOSFET, 500V Vdss, 14.1A Id, 380mOhm Rds(on), TO-252-3 (DPak), -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 13V |
| Current - continuous drain (Id) @ 25°C | 14.1A (Tc) |
| Power dissipation | 98W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Super Junction |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.5V @ 260µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 3.2A, 13V |
| Gate charge (Qg) (Max) @ vgs | 24.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 584 pF @ 100 V |
Gate charge is 24.8 nC at 10 V.
The PG-TO252-3 (DPak) is a surface-mount package with a single drain tab.
The IPD50R380CEAUMA1 is listed as Active on the lifecycle record and ROHS3 compliant. The ROHS3 compliance covers the full substance restriction list including the four phthalates, which matters for EU and UKCA market access.
The maximum on-resistance is 380 mOhm at 3.2 A drain current with 13 V gate-source voltage. That's the figure to use for worst-case conduction loss calculations at rated current.
Maximum gate charge is 24.8 nC at 10 V gate drive. This is the total charge needed to switch the FET — useful for estimating gate-drive power and switching losses.
Yes, it is ROHS3 compliant, covering the full RoHS substance restriction list including the four phthalates.
This part is sourced to order. Availability and pricing are confirmed at quote time.