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Infineon Technologies IPD50R380CEAUMA1

Infineon IPD50R380CEAUMA1 CoolMOS N-Ch MOSFET, 500V 14.1A

MPNIPD50R380CEAUMA1
End of Life

Infineon CoolMOS™ IPD50R380CEAUMA1, N-Channel Super Junction MOSFET, 500V Vdss, 14.1A Id, 380mOhm Rds(on), TO-252-3 (DPak), -55°C to 150°C.

$1.43Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD50R380CEAUMA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C14.1A (Tc)
Power dissipation98W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureSuper Junction
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 260µA
Rds on (Max) @ id, vgs380mOhm @ 3.2A, 13V
Gate charge (Qg) (Max) @ vgs24.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds584 pF @ 100 V

Product details

Gate charge and switching behaviour

Gate charge is 24.8 nC at 10 V.

The PG-TO252-3 (DPak) is a surface-mount package with a single drain tab.

Frequently asked questions

What is the Rds(on) of IPD50R380CEAUMA1?

The maximum on-resistance is 380 mOhm at 3.2 A drain current with 13 V gate-source voltage. That's the figure to use for worst-case conduction loss calculations at rated current.

What is the gate charge of IPD50R380CEAUMA1?

Maximum gate charge is 24.8 nC at 10 V gate drive. This is the total charge needed to switch the FET — useful for estimating gate-drive power and switching losses.

Is IPD50R380CEAUMA1 RoHS compliant?

Yes, it is ROHS3 compliant, covering the full RoHS substance restriction list including the four phthalates.

Where can I buy IPD50R380CEAUMA1?

This part is sourced to order. Availability and pricing are confirmed at quote time.