IPD50R280CEAUMA1

Infineon Technologies · CoolMOS™ CE Series

Infineon CoolMOS™ CE N-Channel MOSFET, 500V Vdss, 13A Id, 280mOhm Rds(on) at 13V drive, PG-TO252-3 (DPak), -55°C to 150°C junction temperature.

Infineon Technologies IPD50R280CEAUMA1
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[IN STOCK] In Stock: 141 pcs
$1.63/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPD50R280CEAUMA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ CE
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C13A (Ta)
Power dissipation119W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 350µA
Rds on (Max) @ id, vgs280mOhm @ 4.2A, 13V
Gate charge (Qg) (Max) @ vgs32.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds773 pF @ 100 V

Technical details

500 V CoolMOS CE for medium-power offline stages

The IPD50R280CEAUMA1: Packaged in a PG-TO252-3 (DPak) surface-mount case, it suits automated assembly for power supplies, PFC boost stages, and flyback converters where board space is constrained but 500 V blocking is non-negotiable.

Thermal and environmental range

Maximum power dissipation is 119 W at the case, so a proper heatsink or PCB copper plane is expected at continuous currents above a few amps.

ROHS3 compliant, so it clears EU and similar regulatory requirements without a waiver.

IPD50R280CEAUMA1
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