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Infineon Technologies IPD50R280CEAUMA1

Infineon IPD50R280CEAUMA1 CoolMOS CE N-Ch 500V 13A MOSFET

MPNIPD50R280CEAUMA1
End of Life

Infineon CoolMOS™ CE N-Channel MOSFET, 500V Vdss, 13A Id, 280mOhm Rds(on) at 13V drive, PG-TO252-3 (DPak), -55°C to 150°C junction temperature.

$1.53Ref. price · indicative, final on quote
Infineon Technologies IPD50R280CEAUMA1 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesCoolMOS™ CE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD50R280CEAUMA1 specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C13A (Ta)
Power dissipation119W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 350µA
Rds on (Max) @ id, vgs280mOhm @ 4.2A, 13V
Gate charge (Qg) (Max) @ vgs32.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds773 pF @ 100 V

Product details

500 V CoolMOS CE for medium-power offline stages

The IPD50R280CEAUMA1: Packaged in a PG-TO252-3 (DPak) surface-mount case, it suits automated assembly for power supplies, PFC boost stages, and flyback converters where board space is constrained but 500 V blocking is non-negotiable.

Thermal and environmental range

Maximum power dissipation is 119 W at the case, so a proper heatsink or PCB copper plane is expected at continuous currents above a few amps.

ROHS3 compliant, so it clears EU and similar regulatory requirements without a waiver.

Frequently asked questions

Is IPD50R280CEAUMA1 RoHS compliant?

Yes, it carries ROHS3 compliance, covering the full RoHS substance restrictions including the four phthalates.

What is the equivalent of IPD50R280CE?

Within the same CoolMOS CE 500 V family, the IPD50R950CEAUMA1 is a higher-Rds(on) sibling (950 mOhm vs 280 mOhm) with lower gate charge (10.5 nC vs 32.6 nC). It fits lighter-load designs where switching loss dominates conduction loss.