Infineon OptiMOS®-P2 IPD50P04P413ATMA2, P-Channel MOSFET, 40 V Vdss, 50 A Id, 12.6 mOhm Rds(on) at 10 V, 51 nC Qg, -55 to 175 °C, PG-TO252-3-313 package.
| Parameter | Value |
|---|---|
| Series | OptiMOS®-P2 |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 58W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 85µA |
| Rds on (Max) @ id, vgs | 12.6mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 51 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3670 pF @ 25 V |
The IPD50P04P413ATMA2: Maximum on-resistance is 12.6 mOhm at Vgs = 10 V and Id = 50 A. The 58 W power dissipation rating (Tc) leaves thermal headroom for a well-designed copper plane on the drain tab.
The ±20 V Vgs max gives margin for gate-drive overshoot in noisy environments.
Junction temperature range is -55 to 175 °C. The ROHS3 compliance simplifies EU and global BOM compliance.
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