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Infineon Technologies IPD50P04P413ATMA2
Infineon Technologies

IPD50P04P413ATMA2 P-Channel MOSFET, 40V 50A, TO-252-3

MPNIPD50P04P413ATMA2
End of Life

Infineon OptiMOS®-P2 IPD50P04P413ATMA2, P-Channel MOSFET, 40 V Vdss, 50 A Id, 12.6 mOhm Rds(on) at 10 V, 51 nC Qg, -55 to 175 °C, PG-TO252-3-313 package.

$1.37Ref. price · indicative, final on quote
IPD50P04P413ATMA2 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD50P04P413ATMA2 Technical Specifications
ParameterValue
SeriesOptiMOS®-P2
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation58W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 85µA
Rds on (Max) @ id, vgs12.6mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs51 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3670 pF @ 25 V

Product details

12.6 mOhm Rds(on) — conduction loss at 50 A

The IPD50P04P413ATMA2: Maximum on-resistance is 12.6 mOhm at Vgs = 10 V and Id = 50 A. The 58 W power dissipation rating (Tc) leaves thermal headroom for a well-designed copper plane on the drain tab.

Gate charge and switching speed

Total gate charge at 10 V is 51 nC, and input capacitance is 3670 pF at 25 V Vds. The ±20 V Vgs max gives margin for gate-drive overshoot in noisy environments.

Temperature range and environment

Junction temperature range is -55 to 175 °C. The ROHS3 compliance simplifies EU and global BOM compliance.

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