Infineon OptiMOS™ IPD50N08S413ATMA1, N-Channel MOSFET, 80 V Vdss, 50 A Id, 13.2 mOhm Rds(on), AEC-Q101, TO-252-3 (DPak), -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 72W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 33µA |
| Rds on (Max) @ id, vgs | 13.2mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1711 pF @ 25 V |
AEC-Q101 qualification is the automotive-grade gate.
The part comes in a TO-252-3 (DPak) surface-mount package, supplier device package PG-TO252-3-313.
The product status is Active. The ROHS3 compliance covers the EU RoHS exemption list — no substance restrictions to flag for export.
Yes, the IPD50N08S413ATMA1 is AEC-Q101 qualified. That is the automotive-grade stress-test qualification for discrete semiconductors, covering the reliability requirements for under-hood and chassis-domain electronic modules.
The maximum on-resistance is 13.2 mOhm at 50 A drain current and 10 V gate-source voltage. At lower gate drive voltages, expect higher Rds(on) — the typical curve in the datasheet shows the derating.
It is a standard DPak footprint with the tab as the drain.