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Infineon Technologies IPD50N06S4L12ATMA2

Infineon IPD50N06S4L12ATMA2 N-Channel MOSFET, 60 V, 50 A

MPNIPD50N06S4L12ATMA2
End of Life

Infineon OptiMOS™ IPD50N06S4L12ATMA2, N-Channel MOSFET, 60 Vdss, 50 A Id, 12 mOhm Rds(on) at 10 V, AEC-Q101, PG-TO252-3-11, -55 to 175 °C junction.

$1.04Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD50N06S4L12ATMA2 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation50W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.2V @ 20µA
Rds on (Max) @ id, vgs12mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2890 pF @ 25 V

Product details

60 V, 50 A N-channel MOSFET for automotive power switching

The Infineon IPD50N06S4L12ATMA2 is an N-channel enhancement-mode MOSFET from the OptiMOS™ series, rated for 60 V drain-to-source and 50 A continuous drain current at 25 °C case temperature. It is qualified to AEC-Q101, making it suitable for automotive under-hood and chassis-domain electronics such as electric pumps, fans, solenoid drivers, and DC-DC converters. The device is housed in a PG-TO252-3-11 (DPak) surface-mount package and supports a junction temperature range of -55 °C to 175 °C.

Package and mounting

Surface-mount in the PG-TO252-3-11 (DPak with two leads plus tab). The tab is the drain connection; the PCB footprint must handle the 50 A continuous current with appropriate copper pour and thermal vias. The -55 °C to 175 °C junction range covers cold-crank and hot-soak conditions.

Frequently asked questions

What is the automotive grade of IPD50N06S4L12ATMA2?

The part is Grade Automotive and qualified to AEC-Q101, suitable for automotive electronics requiring stress-tested semiconductor devices.

Will IPD50N06S4L12ATMA2 drop into a panel specified around IPD50R950CEAUMA1?

No. IPD50R950CEAUMA1 is a 500 V CoolMOS™ part with a 950 mOhm Rds(on) — a different voltage class and on-resistance. The 60 V, 12 mOhm IPD50N06S4L12ATMA2 is not a functional replacement without redesigning the power stage.

What compliance documentation does Infineon provide for IPD50N06S4L12ATMA2?

The part is ROHS3 Compliant. Infineon typically provides RoHS, REACH, and conflict-minerals declarations; check the product page or request via RFQ for specific certificates.

Where can I buy IPD50N06S4L12ATMA2?

This part is sourced to order; availability and pricing are confirmed at quote time. Contact our sales team for current lead time and pricing.