60 V, 50 A N-channel MOSFET for automotive power switching
The Infineon IPD50N06S4L12ATMA2 is an N-channel enhancement-mode MOSFET from the OptiMOS™ series, rated for 60 V drain-to-source and 50 A continuous drain current at 25 °C case temperature. It is qualified to AEC-Q101, making it suitable for automotive under-hood and chassis-domain electronics such as electric pumps, fans, solenoid drivers, and DC-DC converters. The device is housed in a PG-TO252-3-11 (DPak) surface-mount package and supports a junction temperature range of -55 °C to 175 °C.
Package and mounting
Surface-mount in the PG-TO252-3-11 (DPak with two leads plus tab). The tab is the drain connection; the PCB footprint must handle the 50 A continuous current with appropriate copper pour and thermal vias. The -55 °C to 175 °C junction range covers cold-crank and hot-soak conditions.
