Infineon OptiMOS™ IPD50N06S4L12ATMA2, N-Channel MOSFET, 60 Vdss, 50 A Id, 12 mOhm Rds(on) at 10 V, AEC-Q101, PG-TO252-3-11, -55 to 175 °C junction.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 50W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.2V @ 20µA |
| Rds on (Max) @ id, vgs | 12mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2890 pF @ 25 V |
It is qualified to AEC-Q101, making it suitable for automotive under-hood and chassis-domain electronics such as electric pumps, fans, solenoid drivers, and DC-DC converters.
Surface-mount in the PG-TO252-3-11 (DPak with two leads plus tab). The tab is the drain connection; the PCB footprint must handle the 50 A continuous current with appropriate copper pour and thermal vias.
The part is Grade Automotive and qualified to AEC-Q101, suitable for automotive electronics requiring stress-tested semiconductor devices.
No. IPD50R950CEAUMA1 is a 500 V CoolMOS™ part with a 950 mOhm Rds(on) — a different voltage class and on-resistance. The 60 V, 12 mOhm IPD50N06S4L12ATMA2 is not a functional replacement without redesigning the power stage.
The part is ROHS3 Compliant. Infineon typically provides RoHS, REACH, and conflict-minerals declarations; check the product page or request via RFQ for specific certificates.
This part is sourced to order; availability and pricing are confirmed at quote time. Contact our sales team for current lead time and pricing.