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Infineon Technologies IPD50N06S4L08ATMA2

IPD50N06S4L08ATMA2 N-Channel MOSFET, 60 V, 50 A, 7.8 mOhm

MPNIPD50N06S4L08ATMA2
End of Life

Infineon OptiMOS™ IPD50N06S4L08ATMA2, N-Channel MOSFET, 60 V Vdss, 50 A continuous drain, 7.8 mOhm Rds(on) at 10 V, AEC-Q101, PG-TO252-3-11 package, -55°C to 175°C.

$1.2Ref. price · indicative, final on quote
Infineon Technologies IPD50N06S4L08ATMA2 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD50N06S4L08ATMA2 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation71W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.2V @ 35µA
Rds on (Max) @ id, vgs7.8mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs64 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4780 pF @ 25 V

Product details

Automotive N-channel power switch — 60 V, 50 A, 7.8 mOhm

The PG-TO252-3-11 (DPak) surface-mount package suits automated assembly and allows good thermal transfer to the PCB copper area through the exposed tab.

Switching and drive considerations

Gate charge Qg is 64 nC at 10 V, which sets the drive current needed for a target switching frequency. Input capacitance Ciss is 4780 pF at 25 V drain-source, so the driver output impedance and gate-loop inductance must be managed to avoid ringing at turn-on. The gate threshold voltage is 2.2 V maximum at 35 µA drain current, and the drive voltage range for achieving the rated Rds(on) is 4.5 V to 10 V. In a 5 V logic-driven system, the 4.5 V minimum ensures the MOSFET can be fully enhanced; for lowest on-resistance, a 10 V gate supply is recommended.

The PG-TO252-3-11 (DPak) package has a maximum power dissipation of 71 W at case temperature. The 7.8 mOhm Rds(on) at 25°C rises with junction temperature — derate the continuous current accordingly for the actual operating ambient.

Frequently asked questions

What is the Rds(on) of IPD50N06S4L08ATMA2?

The maximum on-resistance is 7.8 mOhm at a drain current of 50 A and gate-source voltage of 10 V. This is the spec to use for conduction-loss calculations in the worst-case hot condition — the actual Rds(on) increases with junction temperature.

Is IPD50N06S4L08ATMA2 RoHS compliant?

Yes, it is ROHS3 compliant. No additional exemption documentation is required for EU-market shipments.