Automotive N-channel power switch — 60 V, 50 A, 7.8 mOhm
The PG-TO252-3-11 (DPak) surface-mount package suits automated assembly and allows good thermal transfer to the PCB copper area through the exposed tab.
Switching and drive considerations
Gate charge Qg is 64 nC at 10 V, which sets the drive current needed for a target switching frequency. Input capacitance Ciss is 4780 pF at 25 V drain-source, so the driver output impedance and gate-loop inductance must be managed to avoid ringing at turn-on. The gate threshold voltage is 2.2 V maximum at 35 µA drain current, and the drive voltage range for achieving the rated Rds(on) is 4.5 V to 10 V. In a 5 V logic-driven system, the 4.5 V minimum ensures the MOSFET can be fully enhanced; for lowest on-resistance, a 10 V gate supply is recommended.
The PG-TO252-3-11 (DPak) package has a maximum power dissipation of 71 W at case temperature. The 7.8 mOhm Rds(on) at 25°C rises with junction temperature — derate the continuous current accordingly for the actual operating ambient.