Infineon OptiMOS IPD50N06S409ATMA2, N-Channel MOSFET, 60 V Vdss, 50 A continuous drain, 9 mOhm Rds(on) at 10 V, AEC-Q101 qualified, PG-TO252-3-11 package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 71W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 34µA |
| Rds on (Max) @ id, vgs | 9mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 47.1 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3785 pF @ 25 V |
The Infineon IPD50N06S409ATMA2 is an N-Channel enhancement-mode MOSFET from the OptiMOS series. It carries a 60 V drain-source voltage rating and delivers 50 A continuous drain current in the surface-mount TO-252-3 (DPak) package.
The IPD50N06S409ATMA2 shows an active lifecycle status with no end-of-life notice. Infineon's OptiMOS family is a high-volume automotive line.
The IPD50N06S409ATMA2 is the current production suffix of the IPD50N06S4 base part number. The electrical ratings are identical; the suffix indicates the specific packaging and reel configuration. It is a direct functional replacement.
The Infineon IPD50R950CEAUMA1 is a CoolMOS CE N-Channel MOSFET in the same TO-252 package, but it is a 500 V, 4.3 A device with 950 mOhm Rds(on). It is not a functional second-source for the 60 V, 50 A, 9 mOhm IPD50N06S409ATMA2 — the voltage and current ratings are in different classes.