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Infineon Technologies IPD50N06S2L13ATMA2

Infineon IPD50N06S2L13ATMA2 N-Channel MOSFET, 55 V, 50 A

MPNIPD50N06S2L13ATMA2
End of Life

Infineon OptiMOS IPD50N06S2L13ATMA2, N-Channel MOSFET, 55 V Vdss, 50 A Id, 12.7 mOhm Rds(on) at 10 V, PG-TO252-3-11 package, -55°C to 175°C junction temperature.

$1.76Ref. price · indicative, final on quote
Infineon Technologies IPD50N06S2L13ATMA2 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD50N06S2L13ATMA2 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation136W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 80µA
Rds on (Max) @ id, vgs12.7mOhm @ 34A, 10V
Gate charge (Qg) (Max) @ vgs69 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 25 V

Product details

55 V, 50 A N-channel — the OptiMOS workhorse in a TO-252

The Infineon IPD50N06S2L13ATMA2 is an N-channel enhancement-mode MOSFET from the OptiMOS series, built on a metal-oxide trench technology.

At 12.7 mOhm max with a 10 V gate, the conduction loss at 34 A is under 15 W — manageable with the TO-252's exposed pad if the PCB copper area is adequate. The total gate charge of 69 nC at 10 V means a gate driver delivering 1 A can switch the FET in roughly 70 ns, keeping transition losses low up to about 100 kHz hard-switching. The drive voltage range spans 4.5 V to 10 V; at 4.5 V the Rds(on) rises, so for the full 50 A rating the 10 V rail is the practical choice.

175°C junction — rated for high-temp environments

It is ROHS3 compliant.

Package and footprint — PG-TO252-3-11

The 0.50 mm lead pitch is standard for this package family.

Frequently asked questions

What is the Rds(on) of IPD50N06S2L13ATMA2?

This is the value used for conduction-loss calculations in the BOM.