55 V, 50 A N-channel — the OptiMOS workhorse in a TO-252
The Infineon IPD50N06S2L13ATMA2 is an N-channel enhancement-mode MOSFET from the OptiMOS series, built on a metal-oxide trench technology.
At 12.7 mOhm max with a 10 V gate, the conduction loss at 34 A is under 15 W — manageable with the TO-252's exposed pad if the PCB copper area is adequate. The total gate charge of 69 nC at 10 V means a gate driver delivering 1 A can switch the FET in roughly 70 ns, keeping transition losses low up to about 100 kHz hard-switching. The input capacitance Ciss is 1800 pF at 25 V Vds, which is moderate for a 50 A device. The drive voltage range spans 4.5 V to 10 V; at 4.5 V the Rds(on) rises, so for the full 50 A rating the 10 V rail is the practical choice.
175°C junction — rated for high-temp environments
The 136 W power dissipation at case temperature Tc is the theoretical maximum; real-world dissipation is limited by the PCB's thermal resistance.
Active production — no LTB concern
It is ROHS3 compliant.
Package and footprint — PG-TO252-3-11
The surface-mount tab is the drain connection; the PCB copper area under the tab sets the thermal resistance. The 0.50 mm lead pitch is standard for this package family.