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Infineon Technologies IPD50N04S4L08ATMA1
Infineon Technologies

IPD50N04S4L08ATMA1 Infineon OptiMOS N-Ch 40V 50A MOSFET

MPNIPD50N04S4L08ATMA1
End of Life

Infineon OptiMOS™ IPD50N04S4L08ATMA1, N-Channel MOSFET, 40 V Vdss, 50 A Id, 7.3 mOhm Rds(on) at 10 V, PG-TO252-3-313, AEC-Q101 qualified, -55°C to 175°C.

$0.97Ref. price · indicative, final on quote
IPD50N04S4L08ATMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD50N04S4L08ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation46W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+20V, -16V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.2V @ 17µA
Rds on (Max) @ id, vgs7.3mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2340 pF @ 25 V

Product details

AEC-Q101 and 175°C junction ceiling

The IPD50N04S4L08ATMA1: AEC-Q101 qualification confirms the part is screened for automotive reliability — thermal cycling, high-temperature reverse bias, and humidity tests passed.

Switching and drive considerations

Gate charge is 30 nC at 10 V. Input capacitance is 2340 pF at 25 V drain. Drive voltage range for rated Rds(on) is 4.5 V to 10 V.

Package and thermal path

Housed in a PG-TO252-3-313 (DPak) surface-mount package, the tab is the drain. Maximum power dissipation is 46 W at case temperature.

Frequently asked questions

What is the Rds(on) of IPD50N04S4L08ATMA1?

Maximum on-resistance is 7.3 mOhm at 50 A drain current with 10 V gate drive. This is the conduction loss spec for high-current switching.

Is IPD50N04S4L08ATMA1 AEC-Q101 qualified?

Yes, it carries AEC-Q101 qualification, which means it meets automotive reliability standards for stress tests, high-temperature operation, and lot traceability.

Is IPD50N04S4L08ATMA1 obsolete?

No — the part is listed as Active (current production).