IPD50N04S410ATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS N-Channel MOSFET, IPD50N04S410ATMA1, 40 V Vdss, 50 A Id, 9.3 mOhm Rds(on) at 10 V, PG-TO252-3-313 surface-mount package.

Infineon Technologies IPD50N04S410ATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPD50N04S410ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation41W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 15µA
Rds on (Max) @ id, vgs9.3mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs18.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1430 pF @ 25 V

Technical details

Gate drive and switching — sizing the driver

The IPD50N04S410ATMA1: Total gate charge is 18.2 nC at 10 V. The threshold voltage maximum is 4 V at 15 µA drain current; the datasheet specifies 10 V drive for the rated Rds(on).

Package and thermal — the TO-252 reality

The PG-TO252-3-313 (DPak) surface-mount package has a single drain tab that carries the bulk of the thermal path — the 41 W power dissipation rating assumes the tab is soldered to a copper pad.

ROHS3 compliant, no exemptions — the part passes directly into EU and RoHS-restricted markets without a waiver.

IPD50N04S410ATMA1
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