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Infineon Technologies IPD50N04S410ATMA1

IPD50N04S410ATMA1 Infineon OptiMOS N-Channel MOSFET, 40V 50A

MPNIPD50N04S410ATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, IPD50N04S410ATMA1, 40 V Vdss, 50 A Id, 9.3 mOhm Rds(on) at 10 V, PG-TO252-3-313 surface-mount package.

$0.96Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD50N04S410ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation41W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 15µA
Rds on (Max) @ id, vgs9.3mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs18.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1430 pF @ 25 V

Product details

Gate drive and switching — sizing the driver

The IPD50N04S410ATMA1: Total gate charge is 18.2 nC at 10 V. Input capacitance is 1430 pF at 25 V drain bias. The threshold voltage maximum is 4 V at 15 µA drain current; the datasheet specifies 10 V drive for the rated Rds(on).

Package and thermal — the TO-252 reality

The PG-TO252-3-313 (DPak) surface-mount package has a single drain tab that carries the bulk of the thermal path — the 41 W power dissipation rating assumes the tab is soldered to a copper pad. Operating junction temperature spans -55°C to 175°C.

Lifecycle and compliance — no LTB risk

ROHS3 compliant, no exemptions — the part passes directly into EU and RoHS-restricted markets without a waiver.

Frequently asked questions

Is IPD50N04S410ATMA1 compatible with 5V gate drive?

Not for full rated performance. The maximum threshold voltage is 4 V at 15 µA, and the specified Rds(on) of 9.3 mOhm is measured at 10 V gate drive. A 5 V drive may not fully enhance the channel, leading to higher conduction loss and potential thermal runaway at high current.

What is the Rds(on) of IPD50N04S410ATMA1?

The maximum on-resistance is 9.3 mOhm at a drain current of 50 A and gate drive of 10 V.

Is IPD50N04S410ATMA1 RoHS compliant?

Yes, it is ROHS3 compliant with no exemptions.