IPD50N04S408ATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ IPD50N04S408ATMA1, N-Channel MOSFET, 40 V Vdss, 50 A Id, 7.9 mOhm Rds(on) at 10 V, 22.4 nC Qg, TO-252-3 (DPak), -55°C to 175°C.

Infineon Technologies IPD50N04S408ATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPD50N04S408ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation46W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 17µA
Rds on (Max) @ id, vgs7.9mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs22.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1780 pF @ 6 V

Technical details

Switching and drive numbers

The gate threshold voltage maximum is 4 V at 17 µA drain current. The datasheet specifies 10 V drive for the rated on-resistance.

The tab is the drain. Mount it on a copper pour on the PCB to pull heat away. Surface-mount orientation is obvious from the tab and beveled corner — no lab bench needed to get it right.

No direct replacement or second source is listed in the official records, but the part is a standard OptiMOS™ 40 V N-channel in a common package, so functionally similar parts from the same series may fit with a layout check.

IPD50N04S408ATMA1
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