Infineon OptiMOS N-Channel MOSFET, 30 V Drain-Source, 50 A Continuous Drain, 7.3 mOhm Rds(on) at 10 V, 68 nC Gate Charge, TO-252-3 (DPak) Surface Mount, -55°C to 175°C Junction.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 136W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 85µA |
| Rds on (Max) @ id, vgs | 7.3mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2000 pF @ 25 V |
IPD50N03S207ATMA1 N-channel OptiMOS MOSFET: 7.3 mOhm Rds(on) at 10 V, 68 nC gate charge, 2000 pF input capacitance at 25 V.
The 175 °C Tj max provides margin in high-temperature environments.
ROHS3 compliant per.
This is the value used for conduction loss calculation at rated current.
Yes, it is ROHS3 compliant.