IPD380P06NMATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ IPD380P06NMATMA1, P-Channel MOSFET, 60V Vdss, 35A Id, 38mOhm Rds(on) at 10V, 63nC Qg, TO-252-3 (DPak) surface mount, -55°C to 175°C junction temperature.

Infineon Technologies IPD380P06NMATMA1
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[IN STOCK] In Stock: 158 pcs
$2.12/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPD380P06NMATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 1.7mA
Rds on (Max) @ id, vgs38mOhm @ 35A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 30 V

Technical details

The IPD380P06NMATMA1: The 38 mOhm Rds(on) at 10 Vgs drives the BOM decision for a high-side load switch. Input capacitance is 2500 pF at 30 V drain-source. The 4 V maximum gate threshold at 1.7 mA drain current means the part is fully enhanced with 10 V logic.

175 °C junction — under-hood and high-ambient ready

The -55 °C to 175 °C operating junction range extends beyond the standard 150 °C industrial limit. This suits applications in engine compartments, high-density power supplies, or enclosures where ambient temperatures push junction temperatures above 125 °C.

ROHS3 compliant per the listing.

IPD380P06NMATMA1
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