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Infineon Technologies IPD35N10S3L26ATMA1

Infineon IPD35N10S3L26ATMA1 N-Channel MOSFET

MPNIPD35N10S3L26ATMA1
End of Life

Infineon OptiMOS™ series, IPD35N10S3L26ATMA1, N-Channel MOSFET, 100 V Vdss, 35 A continuous drain, 24 mOhm Rds(on) max at 10 V, 39 nC gate charge, TO-252-3 (DPak) surface-mount package, -55°C to 175°C junction temperature.

$1.83Ref. price · indicative, final on quote
Infineon Technologies IPD35N10S3L26ATMA1 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD35N10S3L26ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation71W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.4V @ 39µA
Rds on (Max) @ id, vgs24mOhm @ 35A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2700 pF @ 25 V

Product details

What this OptiMOS™ N-channel does in a switching circuit

The Infineon IPD35N10S3L26ATMA1 is a 100 V, 35 A N-channel MOSFET from the OptiMOS™ family, in a TO-252-3 (DPak) surface-mount package. Gate charge is 39 nC at 10 V, a moderate figure that balances switching speed against gate-drive power.

ROHS3 compliant per, and the standard TO-252 footprint is compatible with lead-free reflow profiles.

Mounting and thermal notes for the TO-252

The PG-TO252-3-11 supplier package has the tab as the drain terminal — the PCB land pattern must connect the tab pad to a thermal relief or copper pour.

Frequently asked questions

What is the Rds(on) of IPD35N10S3L26ATMA1?

The maximum Rds(on) is 24 mOhm at 35 A drain current with 10 V gate-to-source drive.