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Infineon Technologies IPD350N06LGBTMA1

IPD350N06LGBTMA1 N-Channel MOSFET, 60 V, 29 A

MPNIPD350N06LGBTMA1
End of Life

Infineon OptiMOS™ IPD350N06LGBTMA1, N-Channel MOSFET, 60 V Vdss, 29 A Id, 35 mOhm Rds(on) at 10 V, PG-TO252-3 package, -55°C to 175°C.

$0.88Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD350N06LGBTMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C29A (Tc)
Power dissipation68W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 28µA
Rds on (Max) @ id, vgs35mOhm @ 29A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds800 pF @ 30 V

Product details

Gate charge and switching speed — 13 nC at 5 V

Total gate charge is 13 nC at 5 V gate drive. For a 100 kHz switching regulator, that translates to roughly 1.3 mA average gate-drive current — a light load on the controller's internal driver. The input capacitance is 800 pF at 30 V drain bias, so the Miller plateau is short and the switching edges stay clean without a dedicated boost stage.

175°C junction — not the usual 150°C ceiling

That extra 25°C above the typical 150°C ceiling matters when the MOSFET sits near a hot inductor or in an under-hood environment where ambient can push 125°C. The 68 W power dissipation at case temperature assumes a good thermal interface to the heatsink; derate above 25°C per the datasheet curve.

Package and footprint — PG-TO252-3 (DPak)

Supplied in the PG-TO252-3 package, also known as TO-252-3 or DPak with two leads plus the tab. Surface-mount reflow profile follows standard MSL 1 (no moisture bake needed if the seal is intact).

Lifecycle and compliance — active, ROHS3

ROHS3 compliant. The date-code laser etch on the package body should trace to Infineon's standard marking format — any deviation in font or alignment is a red flag for gray-market stock.

Frequently asked questions

What is the Rds(on) of the IPD350N06LGBTMA1?

The maximum on-resistance is 35 mOhm at 29 A drain current with 10 V gate drive. At 4.5 V gate drive the Rds(on) is higher — the datasheet curve shows the typical value; the 35 mOhm figure is the guaranteed ceiling at 10 V.

Is the IPD50R950CEAUMA1 a functional equivalent or second source?

No. The IPD50R950CEAUMA1 is a 500 V CoolMOS™ device with 950 mOhm Rds(on) — a completely different voltage class and on-resistance range. It is not a pin-compatible or functional substitute for this 60 V, 35 mOhm OptiMOS™ part.