IPD350N06LGBTMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ IPD350N06LGBTMA1, N-Channel MOSFET, 60 V Vdss, 29 A Id, 35 mOhm Rds(on) at 10 V, PG-TO252-3 package, -55°C to 175°C.

Infineon Technologies IPD350N06LGBTMA1
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[IN STOCK] In Stock: 29 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPD350N06LGBTMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C29A (Tc)
Power dissipation68W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 28µA
Rds on (Max) @ id, vgs35mOhm @ 29A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds800 pF @ 30 V

Technical details

Total gate charge is 13 nC at 5 V gate drive. The input capacitance is 800 pF at 30 V drain bias, so the Miller plateau is short and the switching edges stay clean without a dedicated boost stage.

175°C junction — not the usual 150°C ceiling

That extra 25°C above the typical 150°C ceiling matters when the MOSFET sits near a hot inductor or in an under-hood environment where ambient can push 125°C.

Package and footprint — PG-TO252-3 (DPak)

Supplied in the PG-TO252-3 package, also known as TO-252-3 or DPak with two leads plus the tab. Surface-mount reflow profile follows standard MSL 1 (no moisture bake needed if the seal is intact).

ROHS3 compliant. The date-code laser etch on the package body should trace to Infineon's standard marking format — any deviation in font or alignment is a red flag for gray-market stock.

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