Skip to main content
Infineon Technologies IPD33CN10NGATMA1

Infineon IPD33CN10NGATMA1 N-Channel MOSFET, 100V 27A, 33mOhm

MPNIPD33CN10NGATMA1
End of Life

Infineon OptiMOS™ IPD33CN10NGATMA1, N-Channel MOSFET, 100V Vdss, 27A Id, 33mOhm Rds(on) at 10V Vgs, 24nC Qg, TO-252-3 (DPak) surface mount, -55°C to 175°C junction temperature.

$1.32Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD33CN10NGATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C27A (Tc)
Power dissipation58W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 29µA
Rds on (Max) @ id, vgs33mOhm @ 27A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1570 pF @ 50 V

Product details

100 V, 27 A — the conduction-loss anchor

This is a 100 V class part, which gives roughly 50% headroom on a 48 V bus and comfortable margin on 24 V or 12 V rails where transients can spike to 60-80 V. The 27 A continuous rating assumes the TO-252-3 DPak package is soldered to adequate copper area on the PCB to pull heat from the exposed tab.

Gate charge and switching — 24 nC at 10 V

Total gate charge is 24 nC at 10 V gate drive. For a hard-switched converter at 200 kHz, the gate drive current needed is about 4.8 mA average — easily handled by a standard MOSFET driver. The 1570 pF input capacitance at 50 V drain-source gives a rough idea of the Ciss-driven switching delay; plan for a gate resistor in the 10-22 ohm range to control ringing on the gate loop.

Thermal reach: 175°C junction and 58 W dissipation

Rated operating junction temperature spans -55°C to 175°C, which is the full automotive-grade temperature range. The 58 W maximum power dissipation at case temperature is a package-limited figure — the DPak's RthJC is about 2.6°C/W typical, so real-world dissipation depends heavily on PCB copper area and airflow. In a still-air environment with minimal copper, derate to 2-3 W continuous.

Package and mounting

Supplied in a TO-252-3 (DPak) surface-mount package, supplier device package PG-TO252-3. The ±20 V maximum gate-source rating gives good margin against gate overvoltage spikes during switching transitions.

Lifecycle and compliance

RoHS3 compliant, which covers the full ten restricted substance categories under EU directive 2015/863.

Frequently asked questions

What is the Rds(on) of IPD33CN10NGATMA1?

The maximum on-resistance is 33 mOhm at 27 A drain current with 10 V gate drive. This figure is specified at 25°C junction temperature; at 125°C junction, expect Rds(on) to approximately double per the normalised curve typical of OptiMOS™ devices.

Is IPD33CN10NGATMA1 RoHS compliant?

Yes, it is ROHS3 compliant, covering all ten restricted substance categories including lead, mercury, cadmium, and the four phthalates.

What package does IPD33CN10NGATMA1 use?

The part is in a TO-252-3 (DPak) surface-mount package with the supplier designation PG-TO252-3.